MMBTA94

MMBTA94 PNP Transistor Features SOT-23  For high voltage switching and amplifier applications  The transistor is subdivided into one group according to its DC current gain. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Units Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 300 mA Power Dissipation PD 350 mW TJ,TSTG -55 to 150 ℃ Junction and Storage Temperature Range Electrical Characteristics(Ta=25℃) Parameter Symbol Min. Max. Units hFE hFE hFE 100 40 25 - - Collector Base Cutoff Current at -VCB = 300 V -ICBO - 0.1 µA Collector Emitter Cutoff Current at -VCE = 400 V -ICES - 1 µA Emitter Base Cutoff Current at -VEB = 4 V -IEBO - 0.1 µA Collector Base Breakdown Voltage at -IC= 100 µA -V(BR)CBO 400 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 400 - V Collector Emitter Breakdown Voltage at -IC = 100 µA -V(BR)CES 400 - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 6 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.5 0.75 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VBE(sat) - 0.75 V Cob - 7 pF DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 30 mA Collector Output Capacitance at -VCB = 20 V, f= 1 MHz www.pingjingsemi.com Revison：1.0 May-2018 1/3 MMBTA94 PNP Transistor Electrical Characteristics Curves www.pingjingsemi.com Revison：1.0 May-2018 2/3 MMBTA94 PNP Transistor Package Outline SOT-23 0.8 Max. A 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 0.900 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device Package Shipping MMBTA94 SOT-23 3000PCS/Reel&Tape www.pingjingsemi.com Revison：1.0 May-2018 3/3