2SB1188SQ-Q

2SB1188SQ PNP Transistor SOT-89 Features ⚫ Low collector saturation voltage ⚫ Excellent hFE characteristics 1. Base 2. Collector 3.Emitter Marking: 1188-P 1188-Q 1188-R Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Collector Power Dissipation PC 0.5 W Junction Temperature Tj 150 ℃ Tstg - 55 to + 150 ℃ Storage Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at -VCE = 3 V, -IC = 500 mA Current Gain Group Collector Base Cutoff Current at -VCB = 20 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Transition Frequency at -VCE = 5 V, -IC = 500 mA, f = 30 MHz Output Capacitance at -VCB = 10 V, IE = 0, f = 1 MHz www.pingjingsemi.com Revison：1.0 Nov-2018 P Q R Symbol Min. Typ. Max. Unit hFE hFE hFE 82 120 180 - 180 270 390 - -ICBO - - 1 μA -IEBO - - 1 μA -V(BR)CBO 40 - - V -V(BR)CEO 32 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.8 V fT - 100 - MHz Cob - 50 - pF 1/3 2SB1188SQ PNP Transistor Typical Characteristics Curves Static Characteristic -0.7 —— IC -0.5 -1.6mA -0.4 -1.4mA -1.2mA -0.3 -1.0mA -0.8mA -0.2 Ta=100℃ hFE -1.8mA DC CURRENT GAIN (A) -2.0mA IC -0.6 COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ Ta=25℃ 100 -0.6mA -0.4mA -0.1 COMMON EMITTER VCE= -3V IB=-0.2mA -0.0 10 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— -6 IC -10 Ta=25℃ β=10 -1 -100 COLLECTOR CURREMT IC -2000 —— IC -100 VBEsat —— -2000 Ta=100 ℃ -10 -10 -1000 COLLECTOR CURRENT -100 -1 -5 VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat -1000 -5 -1000 IC Ta=25℃ Ta=100 ℃ (mA) β=10 -1 -10 COLLECTOR CURREMT Cob/Cib VBE —— IC -100 VCB/VEB 300 f=1MHz IE=0/IC=0 Cib (mA) Ta=25 ℃ (pF) 100 CAPACITANCE T= a 25 ℃ -10 Cob C -100 T= a 10 0℃ IC -1000 -2000 (mA) -1000 COLLECTOR CURRENT -2000 (mA) -1000 -100 -0.1 -2000 IC 10 -1 COMMON EMITTER VCE= -3V -0.1 -0 -200 -400 -600 -800 BASE-EMMITER VOLTAGE VBE (mV) www.pingjingsemi.com Revison：1.0 Nov-2018 -1000 -1200 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) 2 /3 2SB1188SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering information Device 2SB1188SQ www.pingjingsemi.com Revison：1.0 Nov-2018 Package SOT-89 Shipping 1000/Tape&Reel(7inches) 3/3