2SB1132SQ-Q

2SB1132SQ PNP Transistor Features ⚫ SOT-89 Low saturation voltage 1. Base 2. Collector 3.Emitter Marking: 1132P 1132Q 1132R Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Pulsed Collector Current -ICP 2 A Power Dissipation PD 500 mW Junction Temperature TJ 150 °C TSTG -55 to 150 °C Storage Temperature Range Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at VCE = 2 V, IC = 500 mA Current Gain Group Symbol P Q R HFE Min. Typ. Max. 82 120 180 - 180 270 390 Unit - Collector Base Cutoff Current at -VCB = 20 V -ICBO - - 0.5 μA Emitter Base Cutoff Current at -VEB = 4 V -IEBO - - 0.5 μA 40 40 - V 40 Collector Base Breakdown Voltage at -IC = 50 μA -V(BR)CBO Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 32 - - V Emitter Base Breakdown Voltage at -IE = 50 μA - V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VCE(sat) - 0.2 0.5 V Transition Frequency at -VCE = 5 V, -IC = 50 mA, f=30MHz fT - 150 - MHz Cob - 20 30 pF Collector Output Capacitance at -VCB = 10 V, IE = 0, f = 1MHz www.pingjingsemi.com Revison：1.0 July-2018 40 - 1/3 2SB1132SQ PNP Transistor (mA) —— VCE IC -3.5mA -3mA -2.5mA -2mA -400 Ta=100℃ DC CURRENT GAIN IC -4.5mA -4mA -600 —— COMMON EMITTER Ta=25℃ -5mA -800 COLLECTOR CURRENT hFE 1000 hFE IC -1000 -1.5mA Ta=25℃ 100 -1mA -200 IB=-0.5mA COMMON EMITTER VCE=-3V -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat —— IC Ta=100 ℃ Ta=25℃ β=10 -10 -10 -100 COLLECTOR CURRENT IC -1000 —— IC -1000 IC (mA) IC Ta=25℃ -750 Ta=100 ℃ β=10 -500 -1 -1000 -10 -100 COLLECTOR CURRENT (mA) fT VBE —— IC -1000 (mA) IC IC fT (mA) (MHz) 300 T =1 00 ℃ a T =2 5℃ a 100 TRANSITION FREQUENCY -100 -10 COMMON EMITTER VCE=-6V COMMON EMITTER VCE=-5V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) PC 600 f=1MHz IE=0/IC=0 Ta=25 ℃ Cib -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) Cob C CAPACITANCE -100 VBEsat —— -1000 -100 -1 -10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1 VCE (V) -400 COLLECTOR CURRENT 10 -20 10 —— IC (mA) Ta 500 400 300 200 100 1 -0.1 0 -1 REVERSE VOLTAGE www.pingjingsemi.com Revison：1.0 July-2018 -10 V (V) -20 0 25 50 75 AMBIENT TEMPERATURE 100 T 125 150 (℃ ) 2/3 2SB1132SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering information Device 2SB1132SQ www.pingjingsemi.com Revison：1.0 July-2018 Package SOT-89 Shipping 1000/Tape&Reel(7inches) 3/3