2SB772SQ-P

2SB772SQ Silicon PNP Power Transistor Features    High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1：Base PIN 2：Collector PIN 3：Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage -VCBO 40 V Collector to Emitter Voltage -VCEO 30 V Emitter to Base Voltage -VEBO 5 V Collector Current-Continuous -IC 3 A Peak Collector Current -ICP 7 A Base Current - Continuous -IB 0.6 A Total Power Dissipation PD 1 W Total Power Dissipation PD (Tc=25℃) 10 W TJ 150 ℃ TSTG -55～150 ℃ Junction Temperature Storage Temperature Range www.pingjingsemi.com Revision：1.0 Apr-2018 1/2 2SB772SQ Silicon PNP Power Transistor Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Min Typ hFE 30 Max Unit DC Current Gain R hFE 60 Q hFE 100 P hFE 160 - E hFE 200 - 400 - at -VCE = 2 V, -IC = 20 mA at -VCE = 2 V, -IC = 1 A Current Gain Group 120 200 320 Collector Base Cutoff Current at -VCB = 30 V -ICBO - - 1 µA Emitter Base Cutoff Current at -VEB = 3 V -IEBO - - 1 µA Collector Base Breakdown Voltage at -IC = 1 mA -V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 30 - - V Emitter Base Breakdown Voltage at -IE = 1 mA -V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA -VCE(sat) - - 0.5 V Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA -VBE(sat) - - 2 V Current Gain Bandwidth Product at -VCE = 5 V, -IC = 100 mA fT - 80 - MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Cob - 55 - pF Package Outline SOT-89 Unit : mm Ordering Information Device Package Shipping 2SB772SQ SOT-89 1000PCS www.pingjingsemi.com Revision：1.0 Apr-2018 2/2