2SD882SQ-P

2SD882SQ Silicon NPN Power Transistor Features.    High current output up to 3A Low saturation voltage Complement to 2SB772SQ Applications PIN1：Base PIN 2：Collector PIN 3：Emitter These devices are intended for use in audio frequency power amplifier and low speed switching applications 2C 1B 3E Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current-Continuous IC 3 A Peak Collector Current ICP 7 A Total Power Dissipation PD 1 W Total Power Dissipation PD (Tc=25℃) 10 W TJ 150 ℃ TSTG -55～150 ℃ Junction Temperature Storage Temperature Range www.pingjingsemi.com Revision:1.0 May-2018 1/3 2SD882SQ Silicon NPN Power Transistor Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit hFE 30 R hFE 60 Q hFE 100 P hFE 160 E hFE 200 - 120 200 320 400 - DC Current Gain at VCE = 2 V, IC = 20 mA at VCE = 2 V, IC = 1 A Current Gain Group Collector Base Cutoff Current at VCB = 30 V ICBO - - 1 µA Emitter Base Cutoff Current at VEB = 3 V IEBO - - 1 µA Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VCE(sat) - - 0.5 V Base Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VBE(sat) - - 2 V Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A fT - 90 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 45 - pF Typical Characteristic Curves 1000 2.0 300 h FE -DC Current Gain 10 9 8 1.6 I C-Collector Current-A VCE=2.0V Pulse Test Pulse Test 7 1.2 6 5 0.8 4 3 0.4 2 h FE 100 60 30 10 6 3 1 0.6 VBE VBE -Base Emitter Voltage-V DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0.3 3 I B =1mA 1 0.001 0.003 0.01 0.03 0.1 0.3 0 4 8 12 1 3 10 0.1 20 16 I C-Collector Current-A o Voltage-V VCE-Collector to Emitter BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) -Base Saturation Voltage-v VCE(sat)-Collector Saturation Voltage-V 10 I C=10.I B Pulse Test 3 1 0.6 0.3 VBE(sat) 0.1 0.06 0.03 VCE(sat) 0.01 0.006 0.003 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 I C-Collector Current-A www.pingjingsemi.com Revision:1.0 May-2018 2/3 2SD882SQ Silicon NPN Power Transistor Package Outline SOT-89 Ordering information Device 2SD882SQ www.pingjingsemi.com Revision:1.0 May-2018 Package SOT-89 Shipping 1000PCS 3/3