BCX53SQ
PNP Silicon Epitaxial Planar Transistor
Features
SOT-89
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Absolute Maximum Ratings (Ta=25℃unless otherwise specified)
Parameter
Symbol
Value
Units
Collector Base Voltage
VCBO
-100
V
Collector Emitter Voltage
VCEO
-80
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-1
A
Peak Collector Current
ICM
A
Total Power Dissipation
Ptot
-1.5
0.5(1)
1.3(2)
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
- 65 to + 150
℃
W
Note :1.Device mounted on an FR4 Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Units
hFE
40
-
-
-
BCX53SQ-10
hFE
63
-
160
-
BCX53SQ-16
hFE
100
-
250
-
hFE
25
-
-
-
Collector Base Cutoff Current at VCB = -30 V
-ICBO
-
-
100
nA
Emitter Base Cutoff Current at VEB = -5 V
-IEBO
-
-
100
nA
Collector Base Breakdown Voltage at IC = -100 µA
-V(BR)CBO
100
-
-
V
Collector Emitter Breakdown Voltage at IC = -1 mA
-V(BR)CEO
80
-
-
V
Emitter Base Breakdown Voltage at IE = -100 µA
-V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA
-VCE(sat)
-
-
0.5
V
-VBE
-
-
1
V
Transition Frequency at VCE =- 5 V, IC = -50 mA, f = 100 MHz
fT
-
145
-
MHz
Collector Capacitance at VCB =-15 V, f = 1 MHz
Cc
-
15
-
pF
DC Current Gain
at VCE = -2 V, IC = -5 mA
at VCE = -2 V, IC = -150 mA
at VCE =- 2 V, IC = -500m A
Base Emitter Voltage at VCE = -2 V, IC = -500 mA
www.pingjingsemi.com
Revision:1.0 Jun-2018
1/3
BCX53SQ
PNP Silicon Epitaxial Planar Transistor
Typical Characteristic Curves
Power derating curves
www.pingjingsemi.com
Revision:1.0 Jun-2018
2/3
BCX53SQ
PNP Silicon Epitaxial Planar Transistor
Package Outline
SOT-89
Dimensions in mm
Ordering information
Device
Package
Shipping
BCX53SQ
SOT-89
1000PCS/Reel&Tape
www.pingjingsemi.com
Revision:1.0 Jun-2018
3/3
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