BCX56SQ-16

BCX56SQ NPN Transistor SOT-89 Features    For AF driver and output stages High collector current Low collector-emitter saturation voltage Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Parameter Symbol Value Units Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM A Total Power Dissipation Ptot 1.5 0.5(1) 1.3(2) Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg - 65 to + 150 ℃ W Note :1.Device mounted on an FR4 Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Units hFE 40 - - - BCX56SQ-10 hFE 63 - 160 - BCX56SQ-16 hFE 100 - 250 - at VCE = 2 V, IC = 500m A hFE 25 - - - Collector Base Cutoff Current at VCB = 30 V ICBO - - 100 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 100 nA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 100 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 80 - - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - - 0.5 V VBE - - 1 V Transition Frequency at VCE = 5 V, IC = 50 mA, f = 100 MHz fT 100 - - MHz Collector Capacitance at VCB = 10 V, f = 1 MHz Cc - 6 - pF DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA Base Emitter Voltage at VCE = 2 V, IC = 500 mA www.pingjingsemi.com Revision：1.0 May-2018 1/3 BCX56SQ NPN Transistor Typical Characteristic Curves Static Characteristics DC Current Gain 1.6m A 1.4m A 1.2m A 1.0m A 0.8m A 0.6m A 0.4m A DC Current Gain hFE Collector Current I c (mA) 1.8m A I B =0.2 m A C ollector Em itter V oltage V C E (V ) Collector Current IC (mA) Base Emitter On Voltage Collector Current Ic (mA) Saturation Voltage V CE(sat), V BE(sat) (V) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter Voltage VBE (V) C o l l e c t o r C u r r e n t IC ( m A ) Capacitance Cob (pF) Collector Output Capacitance Collector Base Voltage VCB (V) Power derating curves www.pingjingsemi.com Revision：1.0 May-2018 2/3 BCX56SQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering information Device Package Shipping BCX56SQ SOT-89 1000PCS/Reel&Tape www.pingjingsemi.com Revision：1.0 May-2018 3/3