2SD965ASQ-R

2SD965ASQ NPN Transistor Features SOT-89 ⚫ Low saturation voltage ⚫ Large Collector Power Dissipation and Current 1. Base 2. Collector 3.Emitter Marking: Q: AQ R:AR S:AS Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage DC Current Gain Collector Current VEBO 7 Unit V IC 5 A PD 750 mW RθJA 167 °C/W TJ 150 °C TSTG -55 to 150 °C Power Dissipation Maximum Junction-to-Ambient Junction Temperature Storage Temperature Range 40 www.pingjingsemi.com Revision：1.0 Feb-2019 40 40 1/4 2SD965ASQ NPN Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Min. Typ. Max. - at VCE = 2 V, IC = 1 mA 230 340 560 - at VCE = 2 V, IC = 2 A 150 200 - 380 600 800 - DC Current Gain at VCE = 2 V, IC = 500 mA Current Gain Group Q R S Symbol HFE - Collector Base Cutoff Current at VCB = 10 V ICBO - - 0.1 μA Emitter Base Cutoff Current at VEB = 7 V IEBO - - 0.1 μA Collector Base Breakdown Voltage at IC = 100 μA V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 30 - - V Emitter Base Breakdown Voltage at IE = 10 μA V(BR)EBO 7 - - V Collector Emitter Saturation Voltage at IC = 3 A, IB = 0.1 A VCE(sat) - - 1 V fT - 150 - MHz Cob - - 50 pF Transition Frequency at VCE = 6 V, IC = 50 mA Collector Output Capacitance at VCB = 20 V, IE = 0, f = 1MHz www.pingjingsemi.com Revision：1.0 Feb-2019 2/4 2SD965ASQ NPN Transistor Static Characteristic 900 700 IC o Ta=100 C 1.4mA 1.2mA 600 500 1mA 400 0.8mA 300 0.6mA 200 o Ta=25 C 0.4mA 100 IB=0.2mA VCE=2V 0 0 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE —— 16 VCE 18 100 20 0.6 1 10 100 1000 COLLECTOR CURRENT (V) IC VCEsat 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— hFE 1.6mA DC CURRENT GAIN (mA) IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 1.8mA 800 hFE 1000 1000 Ta=25℃ Ta=100℃ IC —— 5000 (mA) IC 0.1 Ta=100℃ Ta=25℃ β=30 100 0.3 1 10 100 COLLECTOR CURRENT VBE 5000 1000 IC 100 Cob/ Cib 1000 IC 5000 (mA) VCB/ VEB —— 500 f=1MHz IE=0/ IC=0 o (pF) Ta=25 C Cib C 100 o Ta=100 C 100 Ta=25℃ CAPACITANCE COLLCETOR CURRENT 10 COLLECTOR CURRENT IC —— 1 1000 10 Cob 1 0.1 100 VCE=2V 200 300 400 500 600 700 800 BASE-EMMITER VOLTAGE fT 500 —— VBE 900 1000 1100 10 0.1 1200 1 10 REVERSE VOLTAGE (mV) Pc IC —— V 20 (V) Ta 0.9 COLLECTOR POWER DISSIPATION Pc (W) (MHz) 0.8 fT TRANSITION FREQUENCY 0.3 5000 (mA) IC (mA) β=30 0.01 100 VCE=6V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 o Ta=25 C 10 2 10 COLLECTOR CURRENT www.pingjingsemi.com Revision：1.0 Feb-2019 100 IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) 3/4 2SD965ASQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering information Device 2SD965ASQ www.pingjingsemi.com Revision：1.0 Feb-2019 Package SOT-89 Shipping 1000/Tape&Reel(7inches) 4/4