PJ8205DNSG

PJM8205DNSG N-Channel Power MOSFET Features SOT-23-6 ⚫ Advanced trench process technology ⚫ High Density Cell Design For Ultra Low On-Resistance ⚫ High Power and Current handing capability 4 5 3 6 2 1 Schematic Diagram Drain1 2 6 Gate1 Drain2 5 4 Gate2 1 Source1 3 Source2 Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Parameter Drain-Source Voltage Symbol VDS Maximum 20 Units V VGS ±12 V Continuous Drain Current ID 5 A Pulsed Drain Current Note1 IDM 25 A Power Dissipation PD 1.25 W TJ, TSTG 150, -55 to 150 °C Symbol Typ. Units RθJA 100 °C/W Gate-Source Voltage Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 May-2019 1/5 PJM8205DNSG N-Channel Power MOSFET Electrical Characteristics TC =25℃ unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Units Static Parameters Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V -- -- 1 µA Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VGS=VDS, ID= 250µA 0.5 0.7 1.2 V Static Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=4A -- 25 32 mΩ VGS=4.5V, ID=5A -- 20 25 mΩ VDS=5V, ID=5A -- 10 -- S -- 550 -- pF -- 125 -- pF Note3 Forward Transconductance Note3 gFS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 64 -- pF Total Gate Charge Qg -- 9.5 -- nC Gate Source Charge Qgs -- 2.1 -- nC Gate Drain Charge Qgd -- 1.4 -- nC Turn-On DelayTime tD(on) -- 9 -- ns Turn-On Rise Time tr -- 10 -- ns Turn-Off DelayTime tD(off) -- 32 -- ns -- 24 -- ns -- 0.8 1.2 V -- -- 5 A VGS=0V, VDS=10V, f=1MHz Switching Parameters Turn-Off Fall Time VGS=4.5V, VDS=10V, ID=5A VGS=4V, VDD=10V, ID=5A RGEN=10Ω tf Source-Drain Diode Parameters Body Diode Forward Voltage Body Diode Continuous Source Current VSD IS=5A, VGS=0V IS Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse width ≤ 300μs, duty cycle ≤ 2% www.pingjingsemi.com Revision：1.0 May-2019 2/5 PJM8205DNSG N-Channel Power MOSFET PD Power(W) ID- Drain Current (A） Electrical Characteristics Curves TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Output Characteristics Vgs Gate-Source Voltage (V) Transfer Characteristics www.pingjingsemi.com Revision：1.0 May-2019 TJ-Junction Temperature(℃) Drain-Source On-Resistance 3/5 C Capacitance (pF) Rdson On-Resistance(mΩ) PJM8205DNSG N-Channel Power MOSFET Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Rdson vs Vgs Qg Gate Charge (nC) Gate Charge www.pingjingsemi.com Revision：1.0 May-2019 Vsd Source-Drain Voltage (V) Source- Drain Diode Forward 4/5 PJM8205DNSG N-Channel Power MOSFET Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.05 1.9 0.127± 0.03 ± 0.01 A 1.6 2.8 ±0.1 ±0.05 10 12 0.95 R0.15MAX `4X 0.35 R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 1.1 ± 0.03 0.65 ± 0.05 10 Ordering Information Device PJM8205DNSG www.pingjingsemi.com Revision：1.0 May-2019 Package SOT-23-6 Shipping 3000/Reel&Tape(7inch) 5/5