PJM2302NSA-S

PJM2302NSA-S N- Enhancement Mode Field Effect Transistor SOT-23 Features ⚫ Fast Switching ⚫ Low Gate Charge and RDS(on) ⚫ High power and current handing capability Applications ⚫ Battery protection ⚫ Load switch ⚫ Power management 1. Gate 2.Source 3.Drain Marking: 22S Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 2 A Maximum Power Dissipation PD 0.9 W TJ,TSTG -55 To 150 ℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient Note 2 www.pingjingsemi.com Revision：1.0 Mar-2019 Symbol Limit Unit RθJA 139 ℃/W 1/6 PJM2302NSA-S N- Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25℃ unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.4 0.75 1.2 V Drain-Source On-State Resistance Note3 RDS(ON) - 45 80 mΩ VGS=4.5V, ID=2A - 35 50 mΩ VDS=5V,ID=2A - 5 - S - 260 - pF - 48 - pF Static Characteristics Forward Transconductance Note3 gFS VGS=2.5V, ID=1A Dynamic Characteristics Input Capacitance Clss VDS=10V,VGS=0V, Output Capacitance Coss Reverse Transfer Capacitance Crss - 27 - pF Turn-on Delay Time td(on) - 2.5 - nS Turn-on Rise Time tr - 3.2 - nS - 21 - nS f=1.0MHz Switching Characteristics Turn-Off Delay Time td(off) VDD=10V, RL=3.3Ω VGS=4.5V,RGEN=6Ω Turn-Off Fall Time tf - 3 - nS Total Gate Charge Qg - 2.9 5 nC Gate-Source Charge Qgs - 0.4 - nC Gate-Drain Charge Qgd - 0.6 - nC - - 1.2 V - - 2 A VDS=10V,ID=2A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Note 3 VSD Diode Forward Current Note 2 IS VGS=0V,IS=2A Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Mar-2019 2/6 PJM2302NSA-S N- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Transfer Characteristics Output Characteristics 20 VGS=3.5、3.0、2.5V 10 Ta=25℃ Pulsed Ta=25℃ Pulsed 8 15 (A) VGS=1.5V 5 ID 10 6 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=2.0V 4 2 0 0 2 4 6 DRAIN TO SOURCE VOLTAGE RDS(ON) 120 —— 8 VDS 0 0.0 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) ID —— 2.0 VGS VGS 300 Ta=25℃ Ta=25℃ Pulsed Pulsed 250 (mΩ) 200 RDS(ON) 80 VGS=2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 100 60 VGS=4.5V 40 20 2.5 (V) 150 100 ID= 2A 50 0 5 10 15 DRAIN CURRENT IS —— ID 25 30 (A) 0 0 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) 10 20 1 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision：1.0 Mar-2019 1.6 VSD 2.0 (V) 3/6 PJM2302NSA-S N- Enhancement Mode Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Max. 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 2.2 Typ. 1.025 0.8 1.0 Min. 0.900 A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) 0.500 8o Recommended soldering pad Ordering Information Device PJM2302NSA-S www.pingjingsemi.com Revision：1.0 Mar-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM2302NSA-S N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Figure Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Mar-2019 5/6 PJM2302NSA-S N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.0 Mar-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6