PJM84PSA

PJM84PSA P-Channel MOSFET SOT-23 Feature ⚫ Energy efficient ⚫ Low threshold voltage ⚫ High-speed switching ⚫ Miniature surface mount package saves board space ⚫ 1. Gate 2.Source 3.Drain Marking: P84 ESD protected(HBM) up to 2KV Schematic Diagram D G S Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Symbol -VDS Maximum 50 Units V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 0.13 -IDM 0.52 PD 225 mW TJ, TSTG 150, -55 to 150 °C Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note2 RθJA 556 °C/W Pulsed Drain Current Note1 @tp＜10μs Power Dissipation Junction and Storage Temperature Range A Thermal Characteristics www.pingjingsemi.com Revision：1.1 Jan-2019 1/6 PJM84PSA P-Channel MOSFET Electrical Characteristics (TC = 25℃) Parameter Symbol Conditions Min. Typ. Max. Units -ID=250µA, VGS=0V 50 -- -- V -VDS=50V, VGS=0V -- -- 1 µA -VDS=25V, VGS=0V -- -- 0.1 µA Static Parameters Drain-Source Breakdown Voltage -BVDSS Zero Gate Voltage Drain Current -IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V -- 1 5 µA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS, -ID=250µA 0.9 1.3 2 V -VGS=10V, -ID=0.1A -- 1.7 8 Ω -VGS=5V, -ID=0.1A -- 1.9 10 Ω -VSD -IS=0.13A, VGS=0V -- -- 1.2 V Forward Transconductance Note3 gFS -VDS=25V, -ID=0.1A 50 -- -- mS Input Capacitance Ciss -- 30 -- pF Output Capacitance Coss -- 10 -- pF Reverse Transfer Capacitance Crss -- 5 -- pF -- 2.5 -- ns -- 1 -- ns Static Drain-Source On-Resistance Note3 Body Diode Forward Voltage RDS(ON) Dynamic Parameters VGS=0V, -VDS=5V, f=1MHz Switching Parameters Turn-On DelayTime tD(on) -VDD=15V, RL=50Ω, -ID=2.5A Turn-On Rise Time tr Turn-Off DelayTime tD(off) -- 16 -- ns tf -- 8 -- ns Diode forward current -IS -- -- 0.13 A Diode pulsed forward current -ISM -- -- 0.52 A Turn-Off Fall Time Source-Drain Diode characteristics Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%. www.pingjingsemi.com Revision：1.1 Jan-2019 2/6 PJM84PSA P-Channel MOSFET Transfer Characteristics Output Characteristics -1.6 Ta=25℃ VGS=-10V Pulsed -0.5 VDS=-10V VGS=-5V Pulsed -0.4 VGS=-4.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -1.2 VGS=-3V -0.8 -0.4 -0.3 -0.2 -0.1 VGS=-2V Ta=125℃ Ta=25℃ 0.0 0 -2 -4 -6 -8 0.0 0.0 -10 -0.5 -1.0 -2.0 -2.5 -3.0 RDS(ON) - VGS RDS(ON)  ID 12 5 Pulsed Ta=25℃ Pulsed ID=-0.1A 10 ON-RESISTANCE RDS(ON) () 4 ON-RESISTANCE RDS(ON) () -1.5 GATE TO SOURCE VOLTAGE VGS (V) DRAIN TO SOURCE VOLTAGE VDS(V) 3 VGS=-5V 2 VGS=-10V 1 8 6 4 Ta=125℃ 2 Ta=25℃ 0 0.0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 -2 -4 -6 -8 -10 GATE TO SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Threshold Voltage IS - VSD -1.5 5 -1 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) Pulsed - 0.1 Ta=125℃ Ta=25℃ - 0.01 - 1E-3 0.0 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE VSD (V) www.pingjingsemi.com Revision：1.1 Jan-2019 -1.0 -1.2 ID=-250uA -1.0 -0.5 0.0 25 50 75 100 125 JUNCTION TEMPERATURE Tj (℃) 3/6 PJM84PSA P-Channel MOSFET Package Outline SOT-23（TO-236) 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Typ. 0.900 A 1.0 Dimensions in millimeter Min. 0.8 1.0 Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device PJM84PSA www.pingjingsemi.com Revision：1.1 Jan-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM84PSA P-Channel MOSFET Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.1 Jan-2019 5/6 PJM84PSA P-Channel MOSFET Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.1 Jan-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6