PJM2301PSA

PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features ⚫ ⚫ VDS= -20V ID= -2A RDS(ON) =120mΩ (typ) @ VGS=-2.5V RDS(ON) =88mΩ (typ) @ VGS=-4.5V ⚫ High power and current handing capability ⚫ Halogen and Antimony Free ⚫ Surface mount package SOT-23 1. Gate 2.Source Marking : S01 3.Drain Drain 3 Applications ⚫ Battery protection ⚫ Load switch ⚫ Power management 1 Gate 2 Source Absolute Maximum Ratings TC=25 ℃ unless otherwise noted Symbol Value Drain-Source Voltage Parameter VDS - 20 Gate-Source Voltage VGS ± 12 ID -2 IDM - 10 PD 0.7 W TJ, TSTG - 55 to 150 °C Continuous Drain Current Pulsed Drain Current Note1 Maximum Power Dissipation Operating Junction and Storage Temperature Range Unit V A Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision:1.0 Oct-2018 Symbol RθJA Value 178 Unit ℃/W 1/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Electrical Characteristics TC=25℃ unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Parameters V(BR)DSS VGS = 0 V, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 µA Gate-Source Threshold Voltage Note3 VGS(th) VDS = VGS, ID = - 250 µA -1 V Drain-Source On-State Resistance Note3 RDS(on) Drain-Source Breakdown Voltage - 20 V - 0.4 VGS = - 4.5 V, ID = - 2 A 88 120 VGS = - 2.5 V, ID = - 1 A 120 180 mΩ Dynamic Parameters 4 Forward Transconductance Note3 gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 55 Total Gate Charge Qg 2.9 Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.75 td(on) 11 20 35 60 30 50 10 20 VDS = - 5 V, ID = - 2 A S 405 VDS = - 10 V, VGS = 0 V, f = 1 MHz 75 pF Switching Parameters Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = - 10 V, VGS = - 4.5 V, ID = - 2A VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω tf 0.45 nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS -2 A - 1.2 V Note2 Body Diode Voltage Note3 VSD IS = - 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision:1.0 Oct-2018 2/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Typical Characteristics Curves 10 12 VGS = 2 V VGS = 5 thru 2.5 V V DS=5V 10 -I D - Drain Current (A) -I D - Drain Current (A) 8 6 VGS = 1.5 V 4 8 6 4 125℃ 2 25℃ 2 VGS = 1 V 0 0.0 0.5 1.0 1.5 0 2.0 0 0.5 175 800 150 600 VGS = - 2.5 V 100 2 2.5 Ciss 400 200 Coss Crss VGS = - 4.5 V 75 0 0 2 4 8 0 10 5 -ID - Drain Current (A) 10 15 20 -VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 4 1.5 ID = -2 A ID = -2 A 3 R DS(on) - On-Resistance (Normalized) -VGS - Gate-to-Source Voltage (V) 1.5 Transfer Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Output Characteristics 125 1 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) VDS = -10 V 2 1 1.3 1.1 VGS = -4.5 V 0.9 VGS = -2.5 V 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge www.pingjingsemi.com Revision:1.0 Oct-2018 4 5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor 10 340 I D =-2V 300 R DS(on) - On-Resistance () -I S - Source Current (A ) 1 125℃ 0.1 0.01 25℃ 260 220 125℃ 180 140 0.001 100 25℃ 0.0001 60 0.0 0.2 0.4 0.6 0.8 1.0 -VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 10 0.4 100 µs Limited by RDS(on)* 0.3 1 ms I D - Drain Current (A) VGS(th) Variance (V) ID = 250 µA 0.2 ID = 1 mA 0.1 0.0 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse - 0.1 BVDSS Limited - 0.2 - 50 - 25 0 25 50 75 100 125 0.01 0.1 150 TJ - Temperature (°C) 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) > minimum VGS at which R DS(on) is specified Threshold Voltage Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.pingjingsemi.com Revision:1.0 Oct-2018 4/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0o 0.500 8o 2.2 Typ. 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device PJM2301PSA-S www.pingjingsemi.com Revision:1.0 Oct-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 5/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Conditions of Soldering And Storage ◆ Recommended condition of reflow soldering Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters: ⚫ Time length of peak temperature (longer) ⚫ Time length of soldering (longer) ⚫ Thickness of solder paste (thicker) ◆ Conditions of hand soldering ⚫ Temperature: 370 ℃ ⚫ Time: 3s max. ⚫ Times: one time ◆ ⚫ Storage conditions Temperature 5 to 40 ℃ ⚫ Humidity 30 to 80% RH ⚫ Recommended period One year after manufacturing www.pingjingsemi.com Revision:1.0 Oct-2018 6/7 PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Package Specifications ◆ The method of packaging Cover Tape 3,000 pcs per reel SOT-23 (TO-236) 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 120,000 pcs per carton 4 boxes per carton 435 210 ◆ Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision:1.0 Oct-2018 Symbol A B C E F D T1 T2 N Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 G 1.25±0.1 7/7