GAN063-650WSAQ

GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 27 November 2019 Product data sheet 1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. AEC-Q101 qualified. 2. Features and benefits • • • • • • • Ultra-low reverse recovery charge Simple gate drive (0 V to +10 V or 12 V) Robust gate oxide (±20 V capability) High gate threshold voltage (+4 V) for very good gate bounce immunity Very low source-drain voltage in reverse conduction mode Transient over-voltage capability (800 V) AEC-Q101 qualified 3. Applications • • • • Hard and soft switching converters for industrial and datacom power Bridgeless totempole PFC PV and UPS inverters Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 34.5 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 143 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ ID = 25 A; VDS = 400 V; VGS = 10 V; Tj = 25 °C - 4 - nC - 15 - nC IS = 25 A; dIS/dt = -1000 A/µs; VGS = 0 V; VDS = 400 V; Fig. 14 - 125 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Source-drain diode Qr recovered charge GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 3 D drain mb S mounting base; connected to source Graphic symbol mb D G 1 2 S 3 TO-247 (SOT429) aaa-028116 6. Ordering information Table 3. Ordering information Type number Package GAN063-650WSA Name Description Version TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body SOT429 7. Marking Table 4. Marking codes Type number Marking code GAN063-650WSA GAN063-650WSA GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 2 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V VTDS transient drain to source voltage pulsed; tp = 1 µs; δfactor = 0.01 - 800 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 143 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 34.5 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 24.4 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 IDM peak drain current - 150 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C; VGS = 0 V - 34.5 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A 03aa16 120 Pder (%) aaa-028050 100 ID (A) D = 10% 80 D = 20% 80 60 D = 50% 40 40 DC 20 0 0 50 100 150 Tmb (°C) 0 200 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V; Pulse width ≤ 10 µs Fig. 2. Fig. 1. Normalized total power dissipation as a function of mounting base temperature GAN063-650WSA Product data sheet Drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 3 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET ID (A) aaa-028052 103 tp = 1 µs 102 100 µs 10 10 µs 1 ms 10 ms 1 10-1 10-2 10-1 1 102 10 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 4 junction to mounting base Conditions - - 1.05 K/W Rth(j-a) thermal resistance from vertical in free air junction to ambient - - 40 K/W aaa-028054 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 10-2 P single shot δ= Fig. 4. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 4 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 2.2 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 5.2 V VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2 25 µA VDS = 650 V; VGS = 0 V; Tj = 175 °C - 25 - µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 10 - 120 - mΩ gate resistance f = 1 MHz - 2.3 - Ω ID = 25 A; VDS = 400 V; VGS = 10 V; Tj = 25 °C - 15 - nC - 6 - nC - 4 - nC - 1000 - pF - 130 - pF - 8 - pF Static characteristics VGS(th) IDSS IGSS RDSon RG gate-source threshold voltage drain leakage current gate leakage current Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance Co(er) effective output capacitance, energy related 0 V ≤ VDS ≤ 400 V; VGS = 0 V; Tj = 25 °C; Fig. 12 - 190 - pF Co(tr) effective output capacitance, time related 0 V ≤ VDS ≤ 400 V; VGS = 0 V; Tj = 25 °C - 310 - pF td(on) turn-on delay time - 57 - ns tr rise time VDS = 400 V; RL = 16 Ω; VGS = 12 V; RG(ext) = 40 Ω - 10 - ns td(off) turn-off delay time - 88 - ns tf fall time - 11 - ns Qoss output charge VGS = 0 V; VDS = 400 V - 125 - nC IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13 - 1.9 - V IS = 12.5 A; VGS = 0 V; Tj = 25 °C - 1.35 - V IS = 25 A; dIS/dt = -1000 A/µs; VGS = 0 V; VDS = 400 V; Fig. 14 - 54 - ns - 125 - nC VDS = 400 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 11 Source-drain diode VSD source-drain voltage trr reverse recovery time Qr recovered charge GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 5 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET aaa-028060 200 ID (A) aaa-028061 100 ID (A) VGS = 10 V VGS = 10 V 80 150 7.5 V 8V 7V 60 7V 100 40 50 0 Fig. 5. ID (A) 6V 20 5V 5V 0 2 4 6 8 VDS (V) 0 10 0 2 4 6 8 VDS (V) 10 Tj = 25 °C Tj = 175 °C Output characteristics; drain current as a Fig. 6. function of drain-source voltage; typical values Output characteristics; drain current as a function of drain-source voltage; typical values aaa-028055 80 60 120 40 80 40 175°C 0 aaa-029173 160 QOSS (nC) 20 0 2 4 Tj = 25°C 6 8 VGS (V) 0 10 VDS = 10 V Fig. 7. 6V Transfer characteristics; drain current as a function of gate-source voltage; typical values GAN063-650WSA Product data sheet Fig. 8. 0 100 300 400 500 600 VDS (V) 700 Typical QOSS All information provided in this document is subject to legal disclaimers. 27 November 2019 200 © Nexperia B.V. 2019. All rights reserved 6 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET VGS(th) (V) aaa-029174 6 5 aaa-027810 3 a 2.5 Max 4 2 Typ 3 1.5 Min 2 1 1 0.5 0 -60 -30 0 30 60 90 120 150 Tj (°C) 0 -60 180 -30 0 30 60 90 120 150 Tj (°C) 180 ID = 1 mA ; VDS = VGS Fig. 9. Gate-source threshold voltage as a function of junction temperature aaa-028058 104 aaa-028063 30 C (pF) EOSS (µJ) 25 Ciss 103 Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature 20 102 15 Coss 10 10 5 Crss 1 1 10 102 VDS (V) 0 103 VGS = 0 V; f = 1 MHz Fig. 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values GAN063-650WSA Product data sheet 0 100 200 300 400 500 VDS (V) 600 Fig. 12. Typical COSS Stored Energy All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 7 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET aaa-028059 150 IS (A) 125 Tj = 25°C 50°C 75°C 100°C 100 125°C 150°C 75 175°C 50 25 0 0 2 4 6 8 VSD (V) 10 VGS = 0 V Fig. 13. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values I, V dlS/dt IS trr IRM DUT A Qr 0.25 IRM t VRRM VSD + aaa-029277 Fig. 14. Diode reverse recovery test circuit and waveform GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 8 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 11. Application information To achieve maximum efficiency and stability when switching high currents, a switching node RC snubber (Rsn, Csn) is recommended. For IL < 14 A, a switching-node snubber is not required. CSN is taken from the graph. RSN should be selected to achieve a time constant of 1 ns; e.g. if CSN = 100 pF, RSN = 1 ns / 100 pF = 10 Ω. VBUS DC bus aaa-029603 Csn 180 (pF) 160 driver RG RCDCL (place as close as possible to drain pin) Q2 140 120 VS 100 driver RG Vo Q1 80 RSN RCSN C SN 60 aaa-029331 40 Fig. 16. DC-link snubber circuit 20 0 0 5 10 15 20 25 30 35 IL (A) 40 RG = 30 Ω; τ = RSN × CSN = 1 ns Fig. 15. Snubber capacitance as function of load current Note: A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN FET and can lead to instability. For very high current, an RC snubber is recommended for the switching node. This will increase switching loss, so this is only recommended at high power levels where the losses are a very small percentage of the total power. GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 9 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 12. Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 A E SOT429 E1 A2 E2/2 D2 Q S E2 ØP D D1 ØP1 1 2 3 L1 A1 b2 (2x) b4 L b (3x) e (2x) c 0 20 mm scale øP øP1 Q S 3.658 7.315 5.740 6.299 3.556 7.061 5.486 6.045 Dimensions (mm are the original dimensions) Unit mm A A1 A2 b b2 b4 c D D1 D2 E E1 E2 max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 nom min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 E2/2 2.613 2.159 e 5.436 L L1 20.320 4.445 20.066 3.937 sot429_po Outline version SOT429 References IEC JEDEC JEITA European projection Issue date 19-08-19 19-08-20 TO-247 Fig. 17. Package outline TO-247 (SOT429) GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 10 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal GAN063-650WSA Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 11 / 12 GAN063-650WSA Nexperia 650 V, 50 mΩ Gallium Nitride (GaN) FET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Application information..............................................9 12. Package outline........................................................ 10 13. Legal information......................................................11 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 November 2019 GAN063-650WSA Product data sheet All information provided in this document is subject to legal disclaimers. 27 November 2019 © Nexperia B.V. 2019. All rights reserved 12 / 12