PJM2300NSA

PJM2300NSA N-Channel MOSFET Feature SOT-23 ⚫ TrenchFET Power MOSFET ⚫ Excellent RDS(on) and Low Gate Charge Applications ⚫ Load Switch for Portable Devices ⚫ DC/DC Converter 1. Gate 2.Source 3.Drain Marking: M02 Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Symbol VDS Maximum 20 Units V VGS ±12 V Continuous Drain Current ID 4.5 Pulsed Drain Current IDM 18 PD 0.35 W TJ, TSTG 150, -55 to 150 °C Symbol Typ. Units RθJA 357 °C/W Gate-Source Voltage A Note1 Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Jan-2019 Note2 1/6 PJM2300NSA N-Channel MOSFET Electrical Characteristics (TC = 25℃) Parameter Symbol Conditions Min. Typ. Max. Units Static Parameters Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V -- -- 1 µA Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS, ID=250µA 0.45 -- 1 V VGS=4.5V, ID=3A -- -- 32 mΩ RDS(ON) VGS=2.5V, ID=2A -- -- 40 mΩ VGS=1.8V, ID=2A -- -- 70 mΩ VDS=10V, ID=6A -- 5 -- S -- 523 -- pF -- 99 -- pF Static Drain-Source On-Resistance Note3 Forward Transconductance Note3 gFS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 75 -- pF Total gate charge Qg -- 6.4 8.2 nC Gate Source Charge Qgs -- 1.8 2.3 nC Gate Drain Charge Qgd -- 1.3 1.9 nC Turn-On DelayTime tD(on) -- 10.5 21 ns Turn-On Rise Time tr -- 4.5 9 ns Turn-Off DelayTime tD(off) -- 27.5 55 ns -- 4.3 8.6 ns -- -- 1.2 V VGS=0V, VDS=8V, f=1MHz Switching Parameters Turn-Off Fall Time VGS=4.5V, VDS=10V,ID=6A VDS=10V, VGS=4.5V ID=1A, RGEN=6Ω tf Drain-Source Diode Characteristics Body Diode Forward Voltage VSD IS=1.7A, VGS=0V Note: 1.Repetitive rating : Pulse width limited by junction temperature. 2.Surface mounted on FR4 board, t≤10s. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Jan-2019 2/6 PJM2300NSA N-Channel MOSFET Typical Characteristics Curves Transfer Characteristics Output Characteristics 12 20 VDS=3V Ta=25℃ VGS=2.5V,3V,4.5V,6V Pulsed Pulsed 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 VGS=1.8V 12 8 8 Ta=25℃ 6 4 4 2 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS (V) 0 0.0 5 0.5 1.0 RDS(ON)  ID 30 1.5 2.0 2.5 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON) - VGS 100 Pulsed Ta=25℃ Pulsed ID=6A ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) 80 VGS=2.5V 25 VGS=4.5V 20 60 40 Ta=125℃ 20 Ta=25℃ 15 2 4 6 8 0 10 0 2 4 6 8 GATE TO SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Threshold Voltage IS - VSD 10 10 1.2 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) 1.0 1 Ta=125℃ Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.0 0.2 www.pingjingsemi.com Revision：1.0 Jan-2019 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 1.2 25 50 75 100 125 JUNCTION TEMPERATURE Tj (℃) 3/6 PJM2300NSA N-Channel MOSFET Package Outline 0.8 Max. 1.150 A 0.900 1.025 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 2.2 Typ. 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) 0.500 8o Recommended soldering pad Ordering Information Device Package Shipping PJM2300NSA SOT-23 3,000/Tape & Reel (7 inches) www.pingjingsemi.com Revision：1.0 Jan-2019 4/6 PJM2300NSA N-Channel MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jan-2019 5/6 PJM2300NSA N-Channel MOSFET Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 534 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.0 Jan-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6