PJM138NSA

PJM138NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features  Low gate charge and RDS(ON)  Rugged and relaible Application  Direct logic-level interface: TTL/CMOS  Drivers: relays, solenoids, lamps, hammers, 1. Gate 2.Source 3.Drain Marking: S3 Schematic diagram Display, memories, transistors, etc.  Battery operated systems  Solid-state relays 3Drain 1 Gate 2 Source Absolute Maximum Ratings (TA=25℃unless otherwise specified) Parameter Symbol Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.22 A Maximum Power Dissipation PD 0.35 W TJ,TSTG -55 To 150 ℃ RθJA 357 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient www.pingjingsemi.com Revision：1.1 Jan-2019 1/6 PJM138NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Units Static Characteristics Drain-source breakdown voltage V(BR)DSS Drain to Source Leakage Current IDSS Gate-body leakage current IGSS Gate threshold voltage Note1 VGS(th) Drain-source on-resistance Note1 RDS(on) Forward tranconductance Note1 gFS VGS = 0V, ID=250µA 50 V VDS =50V, VGS= 0V 0.5 µA VDS =30V, VGS= 0V 100 nA VGS =±20V,VDS = 0V ±200 nA 1.6 2 V VGS =10V, ID =0.22A 1 3.5 Ω VGS =4.5V, ID =0.22A 1.1 6 Ω VDS =10V, ID =0.22A 0.13 VDS =VGS, ID =250µA 1 S Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 26.5 VDS =25V,VGS =0V,f=1MHz pF 12.9 5.9 Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) 5 tr VGS=10V,VDD=30V,ID=0.29A 18 td(off) ,RGEN =6Ω, 36 tf ns 14 Source-Drain Diode characteristics Diode Forward voltage Note1 VSD VGS =0V, IS=0.44A 1.4 V Notes : 1. Pulse test : pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.1 Jan-2019 2/6 PJM138NSA N- Enhancement Mode Field Effect Transistor Typical Characteristic Curves Transfer Characteristics Output Characteristics 500 V =10V GS V =4V GS VGS=3V V =3V DS Plused V =2V 320 GS Drain Current(mA) 400 Drain Current I D(mA) 400 300 200 100 240 160 T =125℃ a Ta=25℃ 80 T =25℃ a 0 Pl sed 0 1 2 3 0 4 0.8 Drain to Source Voltage VDS (V) 1.5 1.2 1.6 2.0 2.4 Gate to Source Voltage V GS (V) RDS(ON)——ID R DS(ON)——VGS 5 T a =25℃ ID =500mA Plused Plused On-Resistancer RDS(ON) (Ω) On-Resistancer RDS(ON) (Ω) 4 VGS=4.5V 1.2 VGS=10V 0.9 0.6 0.2 0.4 1 0.6 3 Ta=125℃ 2 1 0 0.8 Ta=25℃ 1 2 3 4 Drain Current I D(A) Gate to Source Voltage V GS (V) IS ——VSD Threshold Voltage 5 Plused Threshold Voltage V TH(V) 0.1 S Source Current I (A) 1.2 Ta=125℃ Ta=25℃ 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage V SD (V) www.pingjingsemi.com Revision：1.1 Jan-2019 1.4 ID =250uA 1.0 0.8 0.6 25 50 75 100 125 Juction Temperature T J(℃) 3/6 PJM138NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0.500 θ 0o 8o 2.2 Typ. 0.900 A 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device Package Shipping PJM138NSA SOT-23 3000PCS/Reel&Tape www.pingjingsemi.com Revision：1.1 Jan-2019 4/6 PJM138NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.1 Jan-2019 5/6 PJM138NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.1 Jan-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6