PJM3407PSA

PJM3407PSA P Enhancement Field Effect Transistor SOT-23 Features  VDS=-30V, ID=-4.1A RDS(on)=50mΩ (Typ.)@VGS=-10V  High density cell design for ultra low RDS(ON)  Low gate charge 1. Gate 3.Drain Marking: R7 Applications  2.Source Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 4.1 A Power Dissipation PD 1.4 W 150, -55 to 150 °C Typ. Units 89 °C/W Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Note1 RθJA www.pingjingsemi.com Revision：1.0 Oct-2017 1/6 PJM3407PSA P Enhancement Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Static Characteristics 30 V -V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current -IDSS VDS =-24V,VGS = 0V 1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Drain-source breakdown voltage Drain-source on-resistance Note2 Gate threshold voltage Note2 Forward tranconductance Note2 RDS(on) VGS =-10V, ID =-4.1A 50 60 mΩ VGS =-4.5V, ID =-3A 68 87 mΩ 1.4 3 V -VGS(th) VDS =VGS, ID =-250µA 1 gFS VDS =-5V, ID =-4A 5.5 S Dynamic Characteristics Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns 5.0 ns 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω tf Source-Drain Diode Characteristics Diode forward voltage VSD IS=-1A,VGS=0V -1 V Notes: 1. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. www.pingjingsemi.com Revision：1.0 Oct-2017 2/6 PJM3407PSA P Enhancement Field Effect Transistor Typical Curves Output Characteristics -20 Transfer Characteristics -5 VGS=-10、-5.0、-4.5、-4.0V Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=-3.5V -4 -10 -5 ID VGS=-3.0V -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -15 -2 -1 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -5 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— VGS ID 100 180 Ta=25℃ Ta=25℃ Pulsed Pulsed 150 (mΩ) (mΩ) 80 RDS(ON) 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-4.5V VGS=-10V 40 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 (A) 120 90 ID=-4.1A 60 30 -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD -10 Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision：1.0 Oct-2017 -1.0 VSD -1.2 (V) 3/6 PJM3407PSA P Enhancement Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Typ. Max. 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Min. A 1.0 Dimensions in millimeter 0.8 1.0 Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device PJM3407PSA www.pingjingsemi.com Revision：1.0 Oct-2017 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM3407PSA P Enhancement Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Oct-2017 5/6 PJM3407PSA P Enhancement Field Effect Transistor Package Specifications  The method of packaging 3,000 pcs per reel SOT-23 (TO-236) 1 3 2 30,000 pcs per box 10 reels per box 195 220 0 21 43 5 120,000 pcs per carton 4 boxes per carton 210 435 Embossed tape and reel data T G 4.0 4.0 N F D H 8.0 B E 120°±2° 1Pin C A Tape (8mm) Reel (7'') www.pingjingsemi.com Revision：1.0 Oct-2017 Symbol A B C E F D G H N T Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 6/6