PJM2319PSA

PJM2319PSA P-Enhancement Field Effect Transistor SOT-23 Features  Fast Switching  Ultra Low Qgd  RDS(on) ≤80 mΩ @VGS= -10V 1. Gate 2.Source 3.Drain Marking: S19 Application Schematic Diagram  Load Switch Drain 3  DC/DC Converter 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25℃ TA = 25℃ -ID 4.4 3.1 A Pulsed Drain Current Note 1 -IDM 20 A Total Power Dissipation PD 1.25 W Operating Junction Temperature TJ 150 ℃ TSTG - 55 to + 150 ℃ Symbol Value Units RθJA 100 ℃/W Storage Temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Mar-2018 1/8 PJM2319PSA P-Enhancement Field Effect Transistor Electrical Characteristics Ratings at TJ = 25℃ unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit -BVDSS VGS = 0 V, ID = -250uA 40 - - V - - 1 uA Static Characteristics Drain-to-Source Breakdown Voltage VDS =-40 V, VGS = 0V Zero Gate Voltage Drain Current -IDSS Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±20V - - ±100 nA Gate Threshold Voltage Note2 -VGS(th) VGS = VDS, ID = -250uA 1 - 3 V Drain-to-Source On-Resistance Note2 RDS(on) VGS = -10V, ID = -3.1A - 66 80 VGS = -4.5V, ID = -2.6A - 90 120 VDS = -15 V, ID = -3.1A - 10 - - 595 - - 76 - Forward Transconductance Note2 gFS mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 61 - Total Gate Charge Qg - 7 11 Gate-Source Charge Qgs - 2.5 - Gate-Drain Charge Qgd - 3.2 - Turn-On Delay Time td(on) - 8 16 Turn-On Rise Time tr - 9 18 Turn-Off Delay Time td(off) - 20 30 - 8 16 0.8 1.5 V -- 1 A Turn-Off Fall Time VGS = 0 V, f = 1.0 MHz, VDS = -20 V VDS =-20V, VGS =-4.5V, ID = -3.1A VDS =-20V, ID=-2.5A, VGEN =-10V, RL =8Ω, tf pF nC ns Source-Drain Diode Characteristics Body Diode Voltage -VSD Continuous Source-Drain Diode Current -IS IS=-2.5A, VGS=0V -- Notes: 1. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Mar-2018 2/8 PJM2319PSA P-Enhancement Field Effect Transistor Ratings and Characteristic Curves 5 20 V GS = 10 V thru 5 V 4 10 ID - Drain Current (A) ID - Drain Current (A) 15 V GS = 4 V 3 2 T C = 25 °C 5 1 T C = 125 °C V GS = 3 V 0.5 1.0 1.5 0 2.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.15 0.12 750 V GS = - 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0 0.0 0.09 V GS = - 10 V 0.06 Ciss 500 250 0.03 Coss Crss 0 0.00 0 5 10 15 0 20 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.8 10 V GS = - 10 V; ID = - .1 A V DS = 20 V 6 V DS = 10 V 4 V DS = 32 V 1.5 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 3.1 A 8 1.2 V GS = - 4.5 V; ID = - 2.6 A 0.9 2 0 0 3 www.pingjingsemi.com Revision：1.0 Mar-2018 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3/8 PJM2319PSA P-Enhancement Field Effect Transistor 100 0.25 10 T J = 150 °C 1 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = - 3.1 A T J = 25 °C 0.15 T J = 125 °C 0.10 T J = 25 °C 0.05 0.1 0 0.00 0.5 1.0 2 4 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 10 2.2 8 2.0 Power (W) VGS(th) (V) ID = - 250 μA 1.8 1.6 1.4 - 50 6 4 2 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 100 5 Limited by RDS(on)* 4 100 μs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse ID - Drain Current (A) ID - Drain Current (A) 10 3 2 100 ms 1 BVDSS Limited 0.01 0.1 1 s, 10 s DC 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Mar-2018 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4/8 PJM2319PSA P-Enhancement Field Effect Transistor 1.0 Power (W) 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (stead-state), Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Mar-2018 5/8 PJM2319PSA P-Enhancement Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Max. 1.150 A 0.900 1.025 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.8 1.9 0.550REF L1 L 0.300 0o θ 2.2 Typ. 1.0 Min. 1.0 Dimensions in millimeter Symbol SOT-23 (TO-236) 0.500 8o Recommended Soldering Pad Ordering Information Device PJM2319PSA www.pingjingsemi.com Revision：1.0 Mar-2018 Package SOT-23 Shipping 3,000PCS/T&R (7 inch) 6/8 PJM2319PSA P-Enhancement Field Effect Transistor Conditions of Soldering And Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Mar-2018 7/8 PJM2319PSA P- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision:1.0 May-2018 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 8/8