PBHV8115TLHR

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PBHV8115TLH 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 10 January 2017 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH 2. Features and benefits • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Small SMD plastic package AEC-Q101 qualified 3. Applications • • • • Power management LCD backlighting LED driver for LED chain module Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 1 A ICM peak collector current single pulse; tp ≤ 1 ms - - 2 A hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C 70 - 300 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B E 1 2 sym123 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number PBHV8115TLH Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes [1] Type number Marking code PBHV8115TLH FB% [1] % = placeholder for manufacturing site code PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 2 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 400 V VCEO collector-emitter voltage open base - 150 V VCESM collector-emitter peak voltage VBE = 0 V - 200 V VEBO emitter-base voltage open collector - 6 V IC collector current - 1 A ICM peak collector current - 2 A IBM peak base current - 400 mA - 300 mW single pulse; tp ≤ 1 ms [1] Ptot total power dissipation Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Tamb ≤ 25 °C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab150 400 Ptot (mW) 300 200 100 0 - 75 - 25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Power derating curve PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 3 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] [1] in free air Min Typ Max Unit - - 417 K/W - - 70 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab151 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.5 0.2 0.1 0.05 10 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 4 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 120 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 120 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 120 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C 70 - 300 VCE = 10 V; IC = 100 mA; Tamb = 25 °C 60 - 300 VCE = 10 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 50 - 300 VCE = 10 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 10 - - IC = 100 mA; IB = 10 mA; Tamb = 25 °C - - 60 mV IC = 100 mA; IB = 20 mA; Tamb = 25 °C - - 50 mV IC = 1 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 350 mV - - 1.2 V VCC = 6 V; IC = 0.5 A; IBon = 0.1 mA; IBoff = -0.1 mA; Tamb = 25 °C - 10 - ns - 565 - ns VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 °C - 575 - ns - 1530 - ns VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage td delay time tr rise time ton turn-on time ts storage time tf fall time - 700 - ns toff turn-off time - 2230 - ns fT transition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C - 30 - MHz Cc collector capacitance VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 6 - pF Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C - 150 - pF PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 5 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor aaa-026013 200 hFE aa-026014 2.0 (1) 300 IC (A) 240 180 1.6 150 (2) 210 150 120 90 1.2 60 100 (3) 0.8 50 IB (mA) = 30 0.4 0 10-1 1 102 10 0 103 104 IC (mA) VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 270 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-026015 1.2 aaa-026016 1.6 VBEsat (V) VBE (V) 1.2 (1) 0.8 (2) (1) 0.8 (3) (2) (3) 0.4 0.4 0 10-1 1 10 102 0 10-1 103 104 IC (mA) VCE = 10 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 5. Product data sheet 102 10 103 104 IC (mA) IC/IB = 5 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBHV8115TLH 1 Fig. 6. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 6 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor aaa-026017 1 aaa-026018 1 VCEsat (V) VCEsat (V) 10-1 10-1 (1) (2) (1) (2) (3) 10-2 10-1 1 10 102 10-2 10-1 103 104 IC (mA) IC/IB = 5 (1) Tamb =100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 7. 1 102 10 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values aaa-026019 102 Fig. 8. Collector-emitter saturation voltage as a function of collector current; typical values aaa-026020 102 RCEsat (Ω) RCEsat (Ω) 10 10 (1) (1) (2) 1 1 (3) (2) 10-1 10-1 1 10 102 10-1 10-1 103 104 IC (mA) IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 9. Product data sheet 102 10 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 Collector-emitter saturation resistance as a function of collector current; typical values PBHV8115TLH 1 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 7 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 12. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 8 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.38 1.9 Dimensions in mm 0.15 0.09 04-11-04 Fig. 13. Package outline TO-236AB (SOT23) 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 14. Reflow soldering footprint for TO-236AB (SOT23) PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 9 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 15. Wave soldering footprint for TO-236AB (SOT23) PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 10 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV8115TLH v.1 2017010 Product data sheet - - PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 11 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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PBHV8115TLH Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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All rights reserved 12 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 13 / 14 PBHV8115TLH NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information......................................................... 8 12. Package outline.......................................................... 9 13. Soldering..................................................................... 9 14. Revision history........................................................11 15. Legal information..................................................... 12 © NXP Semiconductors N.V. 2017. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 January 2017 PBHV8115TLH Product data sheet All information provided in this document is subject to legal disclaimers. 10 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 14 / 14