PBHV9540XX

PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 28 September 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X 2. Features and benefits • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 3. Applications • • • • • • • Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -400 V IC collector current - - -0.5 A ICM peak collector current single pulse; tp ≤ 1 ms - - -1 A hFE DC current gain VCE = -5 V; IC = -20 mA; Tamb = 25 °C 140 - 450 RCEsat collector-emitter saturation resistance IC = -200 mA; IB = -40 mA; Tamb = 25 °C - - 2000 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02 [1] mΩ PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol C B 3 2 1 SOT89 E sym132 6. Ordering information Table 3. Ordering information Type number PBHV9540X Package Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code[1] PBHV9540X %4H [1] % = placeholder for manufacturing site code PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 2 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -400 V VCEO collector-emitter voltage open base - -400 V VCESM collector-emitter peak voltage VBE = 0 V - -400 V VEBO emitter-base voltage open collector - -7 V IC collector current - -0.5 A ICM peak collector current - -1 A IB base current - -250 mA Ptot total power dissipation [1] - 0.52 W [2] - 1.5 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 006aab846 2.0 Ptot (W) 1.6 (1) 1.2 0.8 (2) 0.4 0.0 - 75 - 25 25 (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 75 2 125 175 Tamb (°C) Power derating curves PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 3 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] Min Typ Max Unit [1] - - 240 K/W [2] - - 83 K/W - 20 - K/W thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 006aab847 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab848 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.2 10 0.75 0.33 0.1 0.05 1 0 10- 1 10- 5 0.02 0.01 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10- 1 1 10 102 2 tp (s) 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 4 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = -100 µA; IE = 0 A; Tamb = 25 °C -400 - - V V(BR)CEO collector-emitter breakdown voltage IC = -2.5 mA; IB = 0 A; Tamb = 25 °C -400 - - V V(BR)CES collector-emitter breakdown voltage (base shorted) IC = -2.5 mA; VBE = 0 V; Tamb = 25 °C -400 - - V V(BR)EBO emitter-base breakdown voltage (collector open) IE = -100 µA; IC = 0 A; Tamb = 25 °C -7 - - V ICBO collector-base cut-off current VCB = -320 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -320 V; IE = 0 A; Tj = 150 °C - - -10 µA ICES collector-emitter cut-off VCE = -320 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -7 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -5 V; IC = -20 mA; Tamb = 25 °C 140 - 450 VCE = -5 V; IC = -100 mA; Tamb = 25 °C [1] 140 - 400 IC = -100 mA; IB = -20 mA; Tamb = 25 °C [1] - - -250 mV [1] - - -400 mV RCEsat collector-emitter saturation resistance IC = -200 mA; IB = -40 mA; Tamb = 25 °C [1] - - 2000 mΩ VBEsat base-emitter saturation IC = -100 mA; IB = -10 mA; Tamb = 25 °C voltage [1] - - -0.9 V IC = -200 mA; IB = -40 mA; Tamb = 25 °C [1] - - -1 V [1] - - -0.9 V - 60 - ns - 3650 - ns - 3710 - ns VCEsat collector-emitter saturation voltage VBE base-emitter voltage VCE = -10 V; IC = -200 mA; Tamb = 25 °C td delay time tr rise time ton turn-on time VCC = -6.2 V; IC = -100 mA; IBon = -10 mA; IBoff = 20 mA; Tamb = 25 °C ts storage time - 810 - ns tf fall time - 900 - ns toff turn-off time - 1710 - ns fT transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C - 65 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 14 - pF PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 5 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C - 235 - pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02 aaa-027295 400 aaa-027296 -1 IB (mA) = -550 IC (A) hFE -0.8 (1) 300 -495 -440 -330 -385 -275 -220 -0.6 (2) -165 200 -110 -0.4 -55 (3) 100 -0.2 0 10-1 1 10 102 IC (mA) 0 103 VCE = -5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 4. 0 -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C Fig. 5. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-027297 -1.2 aaa-027298 -1.2 VBE (V) VBEsat (V) -0.9 (1) -0.8 (1) (2) (2) -0.6 (3) (3) -0.4 -0.3 0 10-1 1 10 102 IC (mA) 0 -10-1 103 VCE = -5 V (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 6. Product data sheet -10 -102 IC (mA) -103 IC/IB = 5 (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBHV9540X -1 Fig. 7. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 6 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor aaa-027299 -10 VCEsat (V) VCEsat (V) -1 -1 -10-1 aaa-027300 -10 (1) -10-1 (1) (2) (2) (3) (3) -10-2 -10-1 -1 -10 -102 IC (mA) -10-2 -10-1 -103 IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 8. -1 -102 -10 IC (mA) -103 Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Collector-emitter saturation voltage as a function of collector current; typical values aaa-027301 103 Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values aaa-027302 104 RCEsat (Ω) RCEsat (Ω) 103 102 102 (1) 10 (2) (1) 10 (3) 1 (2) (3) 1 10-1 10-1 1 10 102 IC (mA) 10-1 10-1 103 IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Product data sheet 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PBHV9540X 1 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 7 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 12. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 13. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 8 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 0.53 0.40 1.5 2 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 14. Package outline SOT89 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 1.1 (2×) 1.5 solder paste occupied area Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 15. Reflow soldering footprint for SOT89 PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 9 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 16. Wave soldering footprint for SOT89 PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 10 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV9540X v.1 20170928 Product data sheet - - PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 11 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 15. 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PBHV9540X Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 12 / 13 PBHV9540X Nexperia 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information......................................................... 8 12. Package outline.......................................................... 9 13. Soldering..................................................................... 9 14. Revision history........................................................11 15. Legal information..................................................... 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 September 2017 PBHV9540X Product data sheet All information provided in this document is subject to legal disclaimers. 28 September 2017 © Nexperia B.V. 2017. All rights reserved 13 / 13