PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
23 May 2017
Product data sheet
1. General description
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)
flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
DC-to-DC conversion
Supply line switches
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
60
V
IC
collector current
-
-
1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
2
A
hFE
DC current gain
VCE = 10 V; IC = 500 mA; Tamb = 25 °C
170
-
360
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
[1]
PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
E
emitter
2
C
collector
3
B
base
Simplified outline
Graphic symbol
C
B
3
2
1
SOT89
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
PBSS4160X
Package
Name
Description
Version
SOT89
plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5
mm x 2.5 mm x 1.5 mm body
SOT89
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS4160X
S41
PBSS4160X
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Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
1
A
ICM
peak collector current
-
2
A
IB
base current
-
300
mA
IBM
peak base current
single pulse; tp ≤ 1 ms
-
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
500
mW
[2]
-
950
mW
[3]
-
1.35
W
single pulse; tp ≤ 1 ms
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 6 cm .
aaa-026758
1.5
(1)
Ptot
(W)
1.2
(2)
0.9
0.6
(3)
0.3
0
-75
-25
25
75
2
125
175
Tamb (°C)
(1) FR4 PCB, single-sided copper, 6 cm
2
(2) FR4 PCB, single-sided copper, 1 cm
(3) FR4 PCB, single-sided copper, standard footprint
Fig. 1.
Power derating curves
PBSS4160X
Product data sheet
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
Min
Typ
Max
Unit
[1]
-
-
250
K/W
[2]
-
-
132
K/W
[3]
-
-
93
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm .
aaa-026759
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026760
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.02
1
0.05
0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 1 cm
Fig. 3.
10-1
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4160X
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026761
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
10
0.10
0.02
1
0.50
0.20
0.05
0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 4.
10-1
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4160X
Product data sheet
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 48 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 48 V; IE = 0 A; Tj = 150 °C
-
-
10
µA
ICES
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 500 mA; Tamb = 25 °C
[1]
170
-
360
VCE = 5 V; IC = 1 A; Tamb = 25 °C
[1]
50
-
-
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
[1]
-
-
200
mV
-
-
0.4
Ω
[1]
-
-
1.2
V
[1]
-
-
1
V
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation
voltage
VBE
base-emitter voltage
VCE = 5 V; IC = 1 A; Tamb = 25 °C
fT
transition frequency
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
-
180
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
6
-
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
aaa-026762
400
aaa-026763
2.0
IC
(A)
hFE
(1)
IB (mA) = 50
35
30
1.6
300
45
40
25
20
15
1.2
(2)
10
200
5
0.8
(3)
100
0.4
0
10-1
1
10
102
0
2
4
6
8
VCE (V)
10
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5.
0
103
104
IC (mA)
Fig. 6.
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PBSS4160X
Product data sheet
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026764
1.2
aaa-026765
1.2
VBE
(V)
VBEsat
(V)
0.9
(1)
(1)
0.8
(2)
(2)
0.6
(3)
(3)
0.4
0.3
0
10-1
1
10
102
0
10-1
103
104
IC (mA)
VCE = 5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7.
1
102
10
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig. 8.
aaa-026766
10
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-026767
103
RCEsat
(Ω)
VCEsat
(V)
102
1
10
10-1
(1)
(1)
1
(2)
(3)
10-2
10-1
(3)
1
10
102
103
10-1
10-1
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4160X
Product data sheet
1
10
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9.
(2)
102
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026768
20
aaa-026769
103
CC
(pF)
16
fT
(MHz)
12
102
8
4
0
0
10
20
30
10
40
50
VCB (V)
f = 1 MHz
Tamb = 25 °C
1
10
IC (mA)
102
VCE = 10 V
f = 100 MHz
Tamb = 25 °C
Fig. 11. Collector capacitance as a function of
collector-base voltage; typical values
Fig. 12. Transition frequency as a function of collector
current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
0.53
0.40
1.5
2
1.2
0.8
3
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig. 13. Package outline SOT89
PBSS4160X
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PBSS4160X
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60 V, 1 A NPN low VCEsat BISS transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
1
(3×)
4.85
occupied area
1.1
(2×)
1.5
solder paste
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 14. Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig. 15. Wave soldering footprint for SOT89
PBSS4160X
Product data sheet
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PBSS4160X
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60 V, 1 A NPN low VCEsat BISS transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4160X v.1
20170523
Product data sheet
-
-
PBSS4160X
Product data sheet
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PBSS4160X
Nexperia
60 V, 1 A NPN low VCEsat BISS transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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repeated exposure to limiting values will permanently and irreversibly affect
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PBSS4160X
Product data sheet
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PBSS4160X
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60 V, 1 A NPN low VCEsat BISS transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information......................................................... 8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information..................................................... 11
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Nexperia B.V. 2017. All rights reserved
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Date of release: 23 May 2017
PBSS4160X
Product data sheet
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