PESD15VS2UATVL

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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product data sheet 2004 Feb 18 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UAT series FEATURES QUICK REFERENCE DATA • Unidirectional ESD protection of up to two lines SYMBOL • Common-cathode configuration VRWM reverse stand-off voltage 3.3, 5, 12, 15 and 24 Cd diode capacitance VR = 0 V; f = 1 MHz 207, 152, 38, 32 pF and 23 number of protected lines 2 • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) PARAMETER VALUE UNIT V • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS PIN • Computers and peripherals • Communication systems • Audio and video equipment • Data lines DESCRIPTION 1 anode 1 2 anode 2 3 common cathode • CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and other transients. 1 3 1 3 2 2 MARKING TYPE NUMBER PESD3V3S2UAT MARKING CODE(1) 001aaa401 *7A PESD5V0S2UAT *7B PESD12VS2UAT *7C PESD15VS2UAT *7D PESD24VS2UAT *7E Fig.1 Simplified outline (SOT23) and symbol. Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 2004 Feb 18 sym002 2 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UAT series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UAT − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power CONDITIONS MIN. MAX. UNIT 8/20 µs pulse; notes 1 and 2 PESD3V3S2UAT − 330 W PESD5V0S2UAT − 260 W PESD12VS2UAT − 180 W PESD15VS2UAT − 160 W PESD24VS2UAT − 160 W PESD3V3S2UAT − 18 A PESD5V0S2UAT − 15 A PESD12VS2UAT − 5 A PESD15VS2UAT − 5 A PESD24VS2UAT peak pulse current 8/20 µs pulse; notes 1 and 2 − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. 2004 Feb 18 3 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UAT series ESD maximum ratings SYMBOL ESD PARAMETER CONDITIONS electrostatic discharge VALUE UNIT PESD3V3S2UAT 30 kV PESD5V0S2UAT 30 kV PESD12VS2UAT 30 kV PESD15VS2UAT 30 kV PESD24VS2UAT 23 kV 10 kV IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 PESDxS2UAT-series Notes 1. Device stressed with ten non-repetitive ESD pulses; see Fig.3. 2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV 001aaa191 MLE218 120 Ipp handbook, halfpage 100 % Ipp 100 % Ipp; 8 µs (%) 80 90 % e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 t (µs) 40 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 2004 Feb 18 Fig.3 4 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. t NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UAT series ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VRWM IRM VBR Cd V(CL)R PARAMETER MIN. TYP. MAX. UNIT reverse stand-off voltage PESD3V3S2UAT − − 3.3 V PESD5V0S2UAT − − 5 V PESD12VS2UAT − − 12 V PESD15VS2UAT − − 15 V PESD24VS2UAT − − 24 V reverse leakage current PESD3V3S2UAT VRWM = 3.3 V − 0.7 2 µA PESD5V0S2UAT VRWM = 5 V − 0.1 1 µA PESD12VS2UAT VRWM = 12 V −