2SC3907

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3907 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 1.2 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3907 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 2.0 V VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 55 hFE-2 DC Current Gain IC= 7A; VCE= 5V 35 COB Output Capacitance IE=0; VCB= 10V;ftest= 1.0MHz 270 pF Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 30 MHz fT  CONDITIONS MIN TYP. MAX 180 UNIT V 180 hFE-1 Classifications R O 55-110 90-180 SPTECH website：www.superic-tech.com 2