BU941P

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU941P DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T a =25℃) B SYMBOL V CBO B V CEO B V EBO B IC B B B B B B I CM IB B B B I BM B PC B B B PARAMETER VALUE UNIT Collector-Base Voltage 500 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 5 V Collector Current- Continuous 15 A Collector Current-Peak 30 A Base Current 1 A Base Current-Peak 5 A Collector Power Dissipation @T C =25℃ 155 W Junction Temperature 150 ℃ -65~150 ℃ B Tj B B B B Storage Temperature Range T stg B B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance, Junction to Case 0.97 ℃/W B B SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU941P ELECTRICAL CHARACTERISTICS T C =25℃ unless otherwise specified B B SYMBOL PARAMETER V CEO(SUS) Collector-Emitter Sustaining Voltage I C =50mA; I B = 0 V CE(sat)-1 Collector-Emitter Saturation Voltage I C = 8 A; I B = 100mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage I C = 10 A; I B = 250mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage I C = 12 A; I B = 300mA 2.0 V V BE(sat)-1 Base-Emitter Saturation Voltage I C = 8 A; I B = 100mA 2.2 V Base-Emitter Saturation Voltage I C = 10 A; I B = 250mA 2.5 V Base-Emitter Saturation Voltage I C = 12 A; I B = 300mA 2.7 V Collector Cutoff Current V CE = 500V;V BE = 0 V CE = 500V;V BE = 0;T j = 125℃ 0.1 0.5 mA V CE = 450V; I B = 0 V CE = 450V; I B = 0;T j = 125℃ 0.1 0.5 mA 20 mA 2.5 V B B B B B B B B V BE(sat)-2 B B V BE(sat)-3 B I CES B B B B B CONDITIONS B B B B B B B B B B B B B B Collector Cutoff Current B B B B B B B B B I CEO B B B B B B B B B B B B B B B I EBO Emitter Cutoff Current V EB = 5V; I C = 0 h FE DC Current Gain I C = 5A ; V CE = 10V C-E Diode Forward Voltage I F = 10A B B B B V ECF B B B B B B SPTECH website：www.superic-tech.com B B B B B B B B B B B B B B TYP MAX 400 B B B B MIN UNIT V 300 2