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FJL6920

FJL6920

  • 厂商:

    SPTECH(质超)

  • 封装:

    TO-3PL

  • 描述:

    SPTECH Silicon NPN Power Transistor

  • 数据手册
  • 价格&库存
FJL6920 数据手册
SPTECH Product Specification SPTECH Silicon NPN Power Transistor FJL6920 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage: V(BR)CBO= 1700V(Min) APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse 30 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website:www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor FJL6920 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB=5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A; IB=5A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 30 hFE-2 DC Current Gain IC= 20A; VCE= 5V 4 8 tstg 800 UNIT V Storage Time 3.0 μs 0.2 μs IC= 12A, IB1=2.4A; IB2= -4.8A tf Fall Time SPTECH website:www.superic-tech.com 0.15 2
FJL6920 价格&库存

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FJL6920
  •  国内价格
  • 1+17.66772
  • 10+15.34896
  • 25+12.96864
  • 100+11.48094
  • 500+10.81404
  • 1200+10.51650

库存:8