PESD42VS2UT
Double ESD protection diode array
24 January 2019
Product data sheet
1. General description
Unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines
from the damage caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
Unidirectional ESD protection of two lines
High reverse standoff voltage: VRWM = 42 V
Low leakage current: IRM ≤ 50 nA
ESD protection up to 23 kV
AEC-Q101 qualified
3. Applications
•
ESD protection for standard capacitance signals or supply lines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
42
V
Per diode
VRWM
reverse standoff
voltage
Tamb = 25 °C
IPPM
rated peak pulse
current
tp = 8/20 µs
[1]
-
-
1.8
A
VCL
clamping voltage
IPPM = 1.8 A; tp = 8/20 µs; Tamb = 25 °C
[2] [1]
-
80
95
V
[1]
[2]
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
3
A
common anode
Simplified outline
Graphic symbol
3
1
3
2
SOT23
1
2
006aaa154
PESD42VS2UT
Nexperia
Double ESD protection diode array
6. Ordering information
Table 3. Ordering information
Type number
Package
PESD42VS2UT
Name
Description
Version
SOT23
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD42VS2UT
GK
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
rated peak pulse current
tp = 8/20 µs
Min
Max
Unit
-
1.8
A
Per diode
IPPM
[1]
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
23
kV
ESD maximum ratings
VESD
[1]
[2]
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
[2]
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Device stressed with ten non-repetitive ESD pulses.
PESD42VS2UT
Product data sheet
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PESD42VS2UT
Nexperia
Double ESD protection diode array
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 2.
8/20 µs pulse waveform according to
IEC 61000-4-5
001aaa631
ESD pulse waveform according to IEC
61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
42
V
VBR
breakdown voltage
IR = 2 mA; Tamb = 25 °C
46.1
47
47.9
V
IRM
reverse leakage current VRWM = 42 V; Tamb = 25 °C
-
1
50
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
[1]
-
17
20
pF
VCL
clamping voltage
IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C
[1] [2]
-
60
-
V
IPPM = 1.8 A; tp = 8/20 µs; Tamb = 25 °C
[1] [2]
-
80
95
V
IPP = 16 A; tp = TLP; Tamb = 25 °C
[1] [3]
-
167
-
V
[1]
[2]
[3]
Measured from pin 1 or 2 to pin 3.
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
PESD42VS2UT
Product data sheet
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PESD42VS2UT
Nexperia
Double ESD protection diode array
I
aaa-029541
18
Cd
(pF)
12
V
-VCL -VBR -VRWM
-IRM
-IR
6
-
+
P-N
0
-IPP
006aaa407
Fig. 3.
V-I characteristics for a unidirectional ESD
protection diode
10
20
30
VR (V)
40
f = 1 MHz; Tamb = 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
aaa-029542
16
0
aaa-029543
0
VCL
(V)
VCL
(V)
-20
12
-40
8
-60
4
0
Fig. 5.
-80
0
10
20
30
IPP (A)
-100
-2.5
40
Positive clamping voltage (8/20 µs pulse);
typical values
PESD42VS2UT
Product data sheet
Fig. 6.
-2.0
-1.0
-0.5
0
IPP (A)
Negative clamping voltage (8/20 µs pulse);
typical values
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24 January 2019
-1.5
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PESD42VS2UT
Nexperia
Double ESD protection diode array
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 7.
ESD clamping test setup and waveforms
aaa-0295454
300
VCL
(V)
250
aaa-029545
150
VCL
(V)
100
VCL at 30 nA = 130 V
VCL at 30 nA = -3 V
200
50
150
0
100
-50
50
-100
0
-150
-50
-10
Fig. 8.
10
30
50
t (ns)
-200
-10
70
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD42VS2UT
Product data sheet
Fig. 9.
30
50
t (ns)
70
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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PESD42VS2UT
Nexperia
Double ESD protection diode array
10. Application information
The device is designed for the protection of up to two unidirectional data or signal lines from the
damage caused by ESD and surge pulses. The devices may be used on lines where the signal
polarities are either positive or negative with respect to ground.
line 1 to be protected
line 1 to be protected
line 2 to be protected
ESD protection
diode
ESD protection
diode
GND
GND
unidirectional protection
of two lines
bidirectional protection
of one line
aaa-029537
Fig. 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
18-03-12
Fig. 11. Package outline SOT23
PESD42VS2UT
Product data sheet
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Nexperia B.V. 2019. All rights reserved
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PESD42VS2UT
Nexperia
Double ESD protection diode array
12. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 12. Reflow soldering footprint for SOT23
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 13. Wave soldering footprint for SOT23
PESD42VS2UT
Product data sheet
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PESD42VS2UT
Nexperia
Double ESD protection diode array
13. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD42VS2UT_v.2
20190124
Product data sheet
-
PESD42VS2UT_v.1
Modifications:
•
PESD42VS2UT_v.1
20190117
-
-
PESD42VS2UT
Product data sheet
Product status changed
Objective data sheet
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PESD42VS2UT
Nexperia
Double ESD protection diode array
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risk.
14. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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PESD42VS2UT
Product data sheet
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PESD42VS2UT
Nexperia
Double ESD protection diode array
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Characteristics.............................................................. 3
10. Application information............................................. 6
11. Package outline.......................................................... 6
12. Soldering..................................................................... 7
13. Revision history..........................................................8
14. Legal information........................................................9
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Nexperia B.V. 2019. All rights reserved
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Date of release: 24 January 2019
PESD42VS2UT
Product data sheet
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24 January 2019
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Nexperia B.V. 2019. All rights reserved
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