PESD5V0S1UJF

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression Rev. 01 — 3 June 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. Table 1. Product overview Type number PESD5V0S1UJ Package Configuration NXP JEITA SOD323F SC-90 single PESD12VS1UJ 1.2 Features n Transient Voltage Suppression (TVS) protection of one line n Max. peak pulse power: PPP = 890 W n Low clamping voltage: VCL = 19 V n Low leakage current: IRM = 300 nA n ESD protection up to 30 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 47 A n AEC-Q101 qualified 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Medical and industrial equipment 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd Conditions Min Typ Max Unit PESD5V0S1UJ - - 5 V PESD12VS1UJ - - 12 V PESD5V0S1UJ - 480 530 pF PESD12VS1UJ - 160 180 pF diode capacitance f = 1 MHz; VR = 0 V PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 2. Pinning information Table 3. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number PESD5V0S1UJ Package Name Description Version SC-90 plastic surface-mounted package; 2 leads SOD323F PESD12VS1UJ 4. Marking Table 5. Marking codes Type number Marking code PESD5V0S1UJ 1Q PESD12VS1UJ 1R 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP IPP Parameter Conditions peak pulse power tp = 8/20 µs Max Unit PESD5V0S1UJ - 890 W PESD12VS1UJ - 600 W PESD5V0S1UJ - 47 A PESD12VS1UJ - 22.5 A peak pulse current tp = 8/20 µs PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet Min [1][2] [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 2 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [3] - 420 mW [4] - 720 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Soldering point of cathode tab. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD [1] Parameter Conditions electrostatic discharge voltage Min Max Unit - 30 kV machine model - 400 V MIL-STD-883 (human body model) - 16 kV IEC 61000-4-2 (contact discharge) Device stressed with ten non-repetitive ESD pulses. Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 3 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Thermal characteristics Table 9. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Typ Max Unit - - 290 K/W [2] - - 170 K/W [3] - - 35 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet Min [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 4 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 7. Characteristics Table 10. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM Conditions - - 5 V - 12 V VRWM = 5 V - 0.3 4 µA VRWM = 12 V -