PESD7V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
17 December 2017
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of
the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra
small Surface-Mounted Device (SMD) package. The TrEOS Protection family is optimized
for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of
robustness.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.2 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
•
•
•
ultra high-speed datalines
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
0.2
0.25
pF
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
7
V
PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DSN0603-2 (SOD962-2)
6. Ordering information
Table 3. Ordering information
Type number
PESD7V0C1BSF
Package
Name
Description
Version
DSN0603-2
silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch;
0.6 mm x 0.3 mm x 0.3 mm body
SOD962-2
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD7V0C1BSF
P
PESD7V0C1BSF
Product data sheet
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Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 μs
-
9
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-40
125
°C
Tstg
storage temperature
-65
150
°C
[1]
ESD maximum ratings
VESD
[1]
[2]
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
[2]
-
20
kV
IEC 61000-4-2 (air discharge)
[2]
-
20
kV
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
0
10
20
30
t (µs)
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD7V0C1BSF
Product data sheet
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
7
V
VBR
breakdown voltage
IR = 1 mA; Tamb = 25 °C
7.5
9
11
V
IRM
reverse leakage
current
VRWM = 7 V; Tamb = 25 °C
-
1
50
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
0.2
0.25
pF
f = 2.5 GHz; VR = 0 V
-
0.2
-
pF
VCL
clamping voltage
Rdyn
[1]
[2]
dynamic resistance
IPPM = 9 A; tp = 8/20 µs; Tamb = 25 °C
[1]
-
-
5.5
V
IPP = 8 A; tp = TLP; Tamb = 25 °C
[2]
-
4.6
-
V
IPP = 16 A; tp = TLP; Tamb = 25 °C
[2]
-
6.5
-
V
IR = 10 A; Tamb = 25 °C
[2]
-
0.23
-
Ω
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
IPPM
IPP
aaa-027220
0.25
Cd
(pF)
0.20
-VCL -VBR -VRWM
0.15
IR
IRM
-IRM
-IR
VRWM VBR VCL
-
0.10
0.05
+
0
-IPP
-IPPM
Fig. 3.
006aab325
V-I characteristics for a bidirectional ESD
protection diode
PESD7V0C1BSF
Product data sheet
0
1
2
3
4
5
6
VR (V)
7
f = 1 MHz; Tamb = 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
aaa-016862
0.25
aaa-016863
2
Cd
(pF)
S21
(dB)
0.20
-2
0.15
0.10
-6
0.05
0.00
Fig. 5.
IPP
(A)
0
2
4
6
f (GHz)
-10
10-2
8
Diode capacitance as a function of frequency;
typical values
Fig. 6.
-5
20
-10
15
-15
10
-20
5
-25
0
5
10
15
20
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 7.
Product data sheet
102
-25
-20
-15
-10
-5
0
VCL (V)
tp = 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance with positive clamping
voltage
PESD7V0C1BSF
f (GHz)
aaa-027609
-30
-30
25
30
VCL (V)
10
0
IPP
(A)
25
0
1
Insertion loss; typical values
aaa-027608
30
10-1
Fig. 8.
Dynamic resistance with negative clamping
voltage
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 9.
ESD clamping test setup and waveforms
aaa-016866
120
VCL
(V)
100
80
-20
60
-40
40
-60
VCL at 30 ns = 4.6 V
20
VCL at 30 ns = -3.8 V
-80
0
-20
-10
aaa-016867
20
VCL
(V)
0
-100
0
10
20
30
40
50
60
t (ns)
-120
-10
70
Fig. 10. Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD7V0C1BSF
Product data sheet
0
10
20
30
40
50
60
t (ns)
70
Fig. 11. Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses and ESD
damage. The device is suitable on lines where the signal polarities are both positive and negative
with respect to ground. The device is not designed to be used on lines connected to a DC supply.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 12. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Package outline
0.325
0.275
0.32
0.28
1
0.03
max
0.15
0.13
0.4
0.625
0.575
2
Dimensions in mm
0.25
0.23
14-12-03
Fig. 13. Package outline DSN0603-2 (SOD962-2)
PESD7V0C1BSF
Product data sheet
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
12. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962-2
0.85
0.6
0.2
0.2
0.2
0.4
0.4 0.28
0.256
0.16
0.256
0.676
occupied area
solder paste
solder lands
Dimensions in mm
14-06-12
16-02-01
sod962-2_fr
Fig. 14. Reflow soldering footprint for DSN0603-2 (SOD962-2)
PESD7V0C1BSF
Product data sheet
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Ultra low capacitance bidirectional ESD protection diode
13. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD7V0C1BSF v.2
20171217
Product data sheet
-
PESD7V0C1BSF v.1
-
-
Modifications:
PESD7V0C1BSF v.1
PESD7V0C1BSF
Product data sheet
•
update of TLP measurements
20170906
Product data sheet
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PESD7V0C1BSF
Nexperia
Ultra low capacitance bidirectional ESD protection diode
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
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Data sheet status
Document
status [1][2]
Product
status [3]
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[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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Please consult the most recently issued document before initiating or
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PESD7V0C1BSF
Product data sheet
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Nexperia
Ultra low capacitance bidirectional ESD protection diode
customer uses the product for automotive applications beyond Nexperia’
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PESD7V0C1BSF
Product data sheet
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Ultra low capacitance bidirectional ESD protection diode
15. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics..............................................................4
10. Application information............................................. 7
11. Package outline.......................................................... 7
12. Soldering..................................................................... 8
13. Revision history..........................................................9
14. Legal information..................................................... 10
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Nexperia B.V. 2017. All rights reserved
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Date of release: 17 December 2017
PESD7V0C1BSF
Product data sheet
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