SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP142T
DESCRIPTION
·High DC Current Gain: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min)
·Complement to Type TIP147T
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
0.5
A
PC
Collector Power Dissipation
@TC=25℃
80
W
Tj
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
SPTECH website:www.superic-tech.com
MAX
UNIT
1.56
℃/W
1
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP142T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 30mA, IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A ,IB= 10mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
3.5
V
VBE(on)
Base-Emitter On Voltage
IC= 10A ; VCE= 4V
3.0
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
1
mA
ICEO
Collector Cutoff current
VCE= 50V, IB= 0
2
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2
mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
1000
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
500
100
UNIT
V
Switching Times
td
Delay Time
tr
Rise Time
tstg
tf
Storage Time
VCC = 30 V, IC = 5.0 A,
IB1= -IB2= 20 mA; tp= 20μs
Duty Cycle≤20%
Fall Time
SPTECH website:www.superic-tech.com
0.15
μs
0.55
μs
2.5
μs
2.5
μs
2
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