PMCM650CUNEZ

PMCM650CUNE WL CS P6 20 V, Common Drain N-channel Trench MOSFET 1 Rev. 1.0 — 8 November 2017 Product data sheet Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits • • • • • Common-drain type for bi-directional current flow Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications • Loadswitch • Battery Protection • Battery Management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VSS source-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V - - 5.3 A - 40 52 mΩ IS source current Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s [1] Static characteristics RSSon [1] source-source on-state resistance VGS = 4.5 V; IS = 3 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 2 Pinning information Table 2. Pinning Pin Symbol Description A1 G1 gate 1 A2 S1 source 1 A B1 S2 source 2 B B2 S1 source 1 C1 S2 source 2 C2 G2 gate 2 3 Simplified outline 1 2 Graphic symbol S1 S2 C G1 G2 aaa-027241 Transparent top view Ordering information Table 3. Ordering information Type number PMCM650CUNE 4 Package Name Description Version WLCSP6 wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2 Marking Table 4. Marking codes Type number Marking code PMCM650CUNE AH PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 2 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 5 Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VSS source-source voltage Tj = 25 °C - 20 V VGS gate-source voltage Tj = 25 °C IS source current −8 8 V Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s [1] - 5.3 A Tamb = 25 °C; VGS = 4.5 V [1] - 4.1 A Tamb = 100 °C; VGS = 4.5 V [1] - 2.6 A - 16 A ISM peak source current Tamb = 25 °C; single pulse; tp ≤ 10 μs Ptot total power dissipation Tamb = 25 °C [2] - 556 mW Tamb = 25 °C [1] - 1300 mW - 12500 mW Tsp = 25 °C Tj junction temperature −55 150 °C Tamb ambient temperature −55 150 °C Tstg storage temperature −65 150 °C - 1.2 A Source-Forward diode IFS [1] [2] source-forward current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 3 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 Tj (°C) 175 Figure 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 Tj (°C) 175 Figure 2. Normalized continuous source-source current as a function of junction temperature aaa-02754 102 IS (A) 125 Limit RSSon = VSS/IS tp = 10 µs 10 100 µs 1 ms 1 DC; Tsp = 25 °C 10 ms 10-1 10-2 10-1 DC; Tamb = 25 °C; 6 cm2 1 100 ms 10 VSS (V) 102 Figure 3. Safe operating area; junction to ambient; continuous and peak source currents as a function of sourcesource voltage PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 4 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 6 Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from junction to ambient in free air in free air; t ≤ 5 s Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Min Typ Max Unit [1] - 180 225 K/W [2] - 65 85 K/W [3] - 75 95 K/W [3] - 45 55 K/W - 5 10 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-027259 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 10 0.33 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Figure 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 5 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 102 aaa-027260 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.25 0.33 0.2 0.1 10 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 102 10 FR4 PCB, mounting pad for drain 6 cm tp (s) 103 2 Figure 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 6 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 7 Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristic V(BR)SS source-source breakdown voltage IS = 250 μA; VGS = 0 V; 20 - - V VGSth gate-source threshold voltage ID = 250 μA; VSS = VGS 0.4 0.7 0.9 V ISSS source leakage current VGS = 0 V; VSS = 20 V - - 1 μA IGSS gate leakage current VGS = 8 V; VSS = 0 V - - 10 μA VGS = −8 V; VSS = 0 V - - −10 μA VGS = 4.5 V; VSS = 0 V - - 1 μA VGS = −4.5 V; VSS = 0 V - - −1 μA VGS = 2.5 V; VSS = 0 V - - 200 nA VGS = −2.5 V; VSS = 0 V - - −200 nA VGS = 4.5 V; IS = 3 A; Tj = 25 °C - 40 52 mΩ VGS = 4.5 V; IS = 3 A; Tj = 150 °C - 55 71 mΩ VGS = 2.5 V; IS = 2 A; Tj = 25 °C - 50 62 mΩ VGS = 1.8 V; IS = 1 A; Tj = 25 °C - 63 95 mΩ RSSon source-source on-state resistance gfs forward transconductance VGS = 4.5 V; IS = 3 A - 22 - S RG gate resistance f = 1 MHz - 6.6 - Ω VSS = 10 V; IS = 3 A; VGS = 4.5 V - 9 13 nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge - 0.7 - nC QGD gate-drain charge - 2.9 - nC Ciss input capacitance - 480 - pF Coss output capacitance - 96 - pF Crss reverse transfer capacitance - 96 - pF td(on) turn-on delay time - 6 - ns tr rise time - 20 - ns td(off) turn-off delay time - 39 - ns tf fall time - 15 - ns - 0.7 1.2 V VSS = 10 V; f = 1 MHz; VGS = 0 V VSS = 10 V; IS = 3 A; VGS = 4.5 V; RG(ext) = 6 Ω Source-Foward diode VFS source-forward voltage PMCM650CUNE v.1 Product data sheet VG1S1 = 0 V ; VG2S2 = 4.5 V; IS = 1.2 A All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 7 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET aaa-027321 16 4.5 V IS (A) 2.5 V aaa-027322 10-3 1.8 V IS (A) 12 1.5 V min 10-4 typ max 1.4 V 8 10-5 4 0 VGS = 1.2 V 0 1 2 3 VSS (V) 4 10-6 0 0.5 1 VGS (V) 1.5 Tj = 25 °C VSS = 5 V; Tj = 25 °C Figure 6. Output characteristics: source current as a function of source-source voltage; typical values Figure 7. Sub-threshold source current as a function of gate-source voltage aaa-027323 120 RSSon 1.5 V 1.6 V 1.8 V aaa-027325 200 RSSon 100 150 80 2.2 V 2.5 V 60 100 VGS = 4.5 V 40 Tj = 150 °C 50 20 0 25 °C 0 4 8 12 IS (A) 16 0 0 1 2 3 4 VGS (V) 5 Tj = 25 °C IS = 3 A Figure 8. Source-source on-state resistance as a function of source current; typical values Figure 9. Source-source on-state resistance as a function of gate-source voltage; typical values PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 8 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET aaa-027326 16 Tj = 25 °C IS (A) 150 °C a 12 1.2 8 0.8 150 °C 4 0 0 0.5 1 Tj = 25 °C 1.5 aaa-027327 1.6 0.4 VGS (V) 0 -60 2 0 60 120 Tj (°C) 180 VSS > IS x RSSon Figure 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Figure 11. Normalized source-source on-state resistance as a function of junction temperature; typical values aaa-027329 1.5 aaa-027627 103 Ciss VGS(th) (V) C (pF) 1 max Coss 102 typ Crss 0.5 min 0 -60 0 60 120 Tj (°C) 180 10 10-1 1 10 VSS (V) 102 IS = 250 μA; VSS = VGS f = 1 MHz; VGS = 0 V Figure 12. Gate-source threshold voltage as a function of junction temperature Figure 13. Input, output and reverse transfer capacitances as a function of source-source voltage; typical values PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 9 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET aaa-027330 5 VSS VGS (V) IS 4 VGS(pl) 3 VGS(th) VGS 2 QG1S1 1 0 QG1S2 QG(tot) aaa-027243 Figure 15. Common Drain MOSFET gate charge definitions 0 2 4 6 8 10 QG (nC) VSS = 10 V; IS = 3 A; Tamb = 25 °C Figure 14. Gate-source voltage as a function of gate charge; typical values aaa-027331 1.2 IS (A) 0.8 Tj = 150 °C Tj = 25 °C 0.4 0 0 0.4 0.8 VS1S2 (V) 1.2 VG1S1 = 0 V; VG2S2 = 4.5 V Figure 16. Source current as a function of source-source voltage; typical values 8 Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Figure 17. Duty cycle definition PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 10 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET VSS/IS IGSS S2 S2 A G2 G2 G1 VSS A G1 VGS S1 S1 VGS(th) RSSon S2 S2 A G2 IS G2 V G1 G1 VGS VSS VGS S1 td(on), tr, td(off), tf S1 QG(tot) S2 VFSS/IFSS S2 A RL G2 VG2S2 G2 V V RL VGS = 0 V G1 G1 RG(ext) VSS S1 IS G2 IG = 1 mA G1 PG S2 VSS PG S1 S1 aaa-027255 Figure 18. Test circuits PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 11 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 9 Package outline WLCSP6: wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2 A D B A2 E A A1 ball A1 index area detail X C ball A1 index area y1 C y 1 e2 2 A B C v w b e C A B C X e1 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 max 0.375 0.215 nom 0.345 0.200 min 0.315 0.185 A2 b D 0.160 0.145 0.130 0.275 0.260 0.245 1.51 1.48 1.45 E e e1 e2 v w y 1.01 0.98 0.50 1.00 0.50 0.15 0.05 0.05 0.95 Note Device back is metal coated on Drain potential. Outline version wlcsp6_3-2_po References IEC JEDEC JEITA European projection Issue date 17-04-26 17-05-03 WLCSP6_3-2 Figure 19. Package outline WLCSP6_3-2 PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 12 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 10 Soldering Footprint information for reflow soldering WLCSP6_3-2 0.15 0.35 0.25 0.5 0.25 1.2 solder resist solder paste = solderland 0.5 occupied area 1.7 Dimensions in mm wlcsp6_3-2_fr Reflow soldering is the only recommended soldering method. Dimensions in mm. Figure 20. Reflow soldering footprint WLCSP6 PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 13 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 11 Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMCM650CUNE v.1 20171108 Product data sheet - - PMCM650CUNE v.1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 14 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET 12 Legal information 12.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical PMCM650CUNE v.1 Product data sheet systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 15 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia's warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia's specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer PMCM650CUNE v.1 Product data sheet design and use of the product for automotive applications beyond Nexperia's standard warranty and Nexperia's product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 16 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET Tables Tab. 1. Tab. 2. Tab. 3. Tab. 4. Quick reference data .........................................1 Pinning ...............................................................2 Ordering information ..........................................2 Marking codes ...................................................2 Tab. 5. Tab. 6. Tab. 7. Tab. 8. Limiting values .................................................. 3 Thermal characteristics ..................................... 5 Characteristics ...................................................7 Revision history ...............................................14 Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values ................................................................ 9 Normalized source-source on-state resistance as a function of junction temperature; typical values ............................... 9 Gate-source threshold voltage as a function of junction temperature ..................................... 9 Input, output and reverse transfer capacitances as a function of source-source voltage; typical values ....................................... 9 Gate-source voltage as a function of gate charge; typical values ......................................10 Common Drain MOSFET gate charge definitions ........................................................ 10 Source current as a function of sourcesource voltage; typical values ......................... 10 Duty cycle definition ........................................ 10 Test circuits ..................................................... 11 Package outline WLCSP6_3-2 ........................12 Reflow soldering footprint WLCSP6 ................ 13 Figures Fig. 1. Fig. 2. Fig. 3. Fig. 4. Fig. 5. Fig. 6. Fig. 7. Fig. 8. Fig. 9. Normalized total power dissipation as a function of junction temperature ........................4 Normalized continuous source-source current as a function of junction temperature .... 4 Safe operating area; junction to ambient; continuous and peak source currents as a function of source-source voltage ..................... 4 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values .....................................................5 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values .....................................................6 Output characteristics: source current as a function of source-source voltage; typical values ................................................................ 8 Sub-threshold source current as a function of gate-source voltage ...................................... 8 Source-source on-state resistance as a function of source current; typical values .......... 8 Source-source on-state resistance as a function of gate-source voltage; typical values ................................................................ 8 PMCM650CUNE v.1 Product data sheet Fig. 11. Fig. 12. Fig. 13. Fig. 14. Fig. 15. Fig. 16. Fig. 17. Fig. 18. Fig. 19. Fig. 20. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 8 November 2017 © Nexperia B.V. 2017. All rights reserved. 17 / 18 PMCM650CUNE Nexperia 20 V, Common Drain N-channel Trench MOSFET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 Product profile .................................................... 1 General description ............................................1 Features and benefits ........................................1 Applications ........................................................1 Quick reference data ......................................... 1 Pinning information ............................................ 2 Ordering information .......................................... 2 Marking .................................................................2 Limiting values .................................................... 3 Thermal characteristics ......................................5 Characteristics .................................................... 7 Test information ................................................ 10 Package outline .................................................12 Soldering ............................................................13 Revision history ................................................ 14 Legal information .............................................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © Nexperia B.V. 2017. All rights reserved. For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 8 November 2017 Document identifier: PMCM650CUNE v.1