2SC2517

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2517 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2.5 A Pc Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2517 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICER Collector Cutoff Current VCE= 100V; RBE= 51Ω, Ta=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= -1.5V VCE= 100V; VBE(off)= -1.5V, Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 5V 40 hFE-2 DC Current Gain IC= 2A; VCE= 5V 40 100 UNIT V 200 Switching times ton Turn-on Time tstg Storage Time tf  IC= 3.0A ,RL= 17Ω, IB1= -IB2= 0.3A,VCC≈ 50V Fall Time 0.5 μs 2.5 μs 0.5 μs hFE-2 Classifications M L K 40-80 60-120 100-200 SPTECH website：www.superic-tech.com 2