2SC3157

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.6V(Max.)@IC= 5A ·Fast Switching Speed ·Complement to Type 2SA1261 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 3.5 A Collector Power Dissipation @ Ta=25℃ 1.5 Collector Power Dissipation @ TC=25℃ 60 Junction Temperature 150 ℃ -55~150 ℃ PC TJ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com W 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= -1.5V VCE= 100V; VBE(off)= -1.5V, Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 40 200 hFE-2 DC Current Gain IC= 3.0A; VCE= 5V 40 200 hFE-3 DC Current Gain IC= 5.0A; VCE= 5V 20 100 UNIT V Switching times ton Turn-on Time tstg Storage Time tf  IC= 5.0A, RL= 10Ω, IB1= -IB2= 0.5A, VCC≈ 50V Fall Time 0.5 μs 1.5 μs 0.5 μs hFE-2 Classifications M L K 40-80 60-120 100-200 SPTECH website：www.superic-tech.com 2