2N6488

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N6488 DESCRIPTION ·DC Current Gain Specified to 15 Amperes: hFE =20-150@ IC= 5.0A =5.0(Min)@ IC=15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=80Vdc(Min) ·Complement to Type 2N6491 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current 5 A Collector Power Dissipation @ TC=25℃ 75 Collector Power Dissipation @ Ta=25℃ 1.8 Junction Temperature 150 ℃ -65~150 ℃ PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient SPTECH website：www.superic-tech.com MAX UNIT 1.67 ℃/W 70 ℃/W 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N6488 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A; IB=0.5A 1.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=15A; IB=5.0A 3.5 V VBE(on)-1 Base-Emitter On Voltage IC=5A ; VCE=4V 1.3 V VBE(on)-2 Base-Emitter On Voltage IC=15A ; VCE=4V 3.5 V ICEO Collector Cutoff Current VCE=40V;IB=0 1.0 mA IEBO Emitter Cutoff Current VEB=5V; IC=0 1.0 mA hFE-1 DC Current Gain IC=5A ; VCE=4V 20 hFE-2 DC Current Gain IC=15A ; VCE=4V 5 Current-Gain—Bandwidth Product IC=1.0A ; VCE=4V,ftest=1.0MHz fT SPTECH website：www.superic-tech.com 80 UNIT 5.0 V 150 MHz 2