2SA1290

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1290 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@IC= -3.5A ·Fast Switching Speed ·Complement to Type 2SC3254 APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). ·Power amplifier (high power car stereo, motor controller). ·High-speed switching (switching regulator, driver). ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification 2SA1290 SPTECH Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3.5A; IB= -0.175A -0.4 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE DC Current Gain IC= -1A; VCE= -2V Current-Gain—Bandwidth Product IC= -1A; VCE= -5V fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching Times ton Turn-on Time tstg Storage Time tf  IC= -3A, RL= 6.67Ω, IB1= -IB2= -0.15A, VCC≈-20V Fall Time hFE Classifications Q R S 70-140 100-200 140-280 SPTECH website：www.superic-tech.com 2