2SC4064

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4064 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.35V(Max)@ IC=6A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Complement to Type 2SA1567 APPLICATIONS ·Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.35 V ICBO Collector Cutoff Current VCB=50V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 6A ; VCE= 1V Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 40 MHz Output Capacitance IE= 0 ; VCB= 12V;ftest= 1.0MHz 180 pF 0.6 μs 1.4 μs 0.4 μs fT COB CONDITIONS MIN TYP. MAX 50 UNIT V 50 Switching times ton Turn-on Time tstg Storage Time tf IC= 6A ; IB1= -IB2= 0.12A RL= 4Ω;VCC= 24V Fall Time SPTECH website：www.superic-tech.com 2