AC4606

AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET N channel P channel V General Description N+P Complementary Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation AC4606 SOP8 7N03C 3000 Parameter 30 -30 V 29.4 37.8 mΩ 46.2 37.8 mΩ 6 -7 A 100% UIS Tested Symbol Max N-channel Max P-channel Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS 20 20 ±V 6 -7 5 -5.5 IDM 9.6 -11.2 IAR 1.92 -2.2 EAR 4.416 -5.2 2 3.1 1.3 2 -55 to 150 -55 to 150 Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B G Repetitive avalanche energy L=0.1mH Power Dissipation ID G TA=25°C A PD TA=70°C Junction and Storage Temperature Range TJ, TSTG A mJ W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State 第 1 页 RθJA RθJL Typ Max Units 105 157 °C/W 210 252 °C/W 63 100 °C/W AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min Typ Max Units 30 V 1 5 uA ±100 nA 1.8 2.4 V #REF! 29.4 42.0 VGS=4.5V, ID=6A 46.2 60.1 Forward Transconductance VDS=5V, ID=6A 83 Diode Forward Voltage IS=1A,VGS=18V 0.72 1.2 mΩ S 1 V 6 A Typ Max Units 255 311 pF 45 55 pF 35 41 pF 0.65 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.3 tD(on) Turn-On DelayTime 4.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge Conditions Min Typ 2.55 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 1.275 0.91 3.4 11.9 nC ns 3.825 IF=-8A, dI/dt=500A/µs 8.5 ns IF=18A, dI/dt=500A/µs 2.2 nC 第 2 页 AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 3 页 AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 4 页 AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min Typ Max Units -30 V -1 -5 uA ±100 nA -1.8 -2.4 V VGS=-10V, ID=-7A 54.0 54.0 VGS=-4.5V, ID=-7A 59.4 77.2 Forward Transconductance VDS=-5V, ID=-7A 43 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.2 mΩ S -1 V -7 A Typ Max Units 760 927 pF 140 172 pF 95 113 pF 1.6 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge Conditions Min Typ 6.7 VGS=-10V, VDS=-15V, ID=-7A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 3.35 2.24 6 21 nC ns 6.75 IF=-8A, dI/dt=500A/µs 15 ns IF=18A, dI/dt=500A/µs 9.7 nC 第 5 页 AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 6 页 AC4606 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 7 页