SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
MJ11032
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
·High DC Current Gain: hFE= 1000(Min.)@IC= 25A
: hFE= 400(Min.)@IC= 50A
·Complement to the PNP MJ11033
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
50
A
ICM
Collector Current-Peak
100
A
IB
Base Current-Continunous
2
A
PC
Collector Power Dissipation
@TC=25℃
300
W
Tj
Junction Temperature
200
℃
-55~+200
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.584
℃/W
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
MJ11032
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 25A; IB= 250mA
2.5
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 50A; IB= 500mA
3.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 25A; IB= 250mA
3.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 50A; IB= 500mA
4.5
V
ICBO
Collector Cutoff Current
VCB=120V;IE=0
VCB=120V; IE=0; TC=150℃
2.0
5.0
mA
ICEO
Collector Cutoff Current
VCE= 120V; IB= 0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 25A, VCE= 5V
1000
hFE-2
DC Current Gain
IC= 50A, VCE= 5V
400
SPTECH website:www.superic-tech.com
MIN
TYP.
MAX
120
UNIT
V
18000
2
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