MJ11033

SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11032 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -50 A ICM Collector Current-Peak -100 A IB Base Current-Continunous -2 A PC Collector Power Dissipation @TC=25℃ 300 W Tj Junction Temperature 200 ℃ -55~+200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.584 ℃/W SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Darlington Power Transistor MJ11033 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -25A; IB= -250mA -2.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -50A; IB= 500mA -3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -25A; IB= -250mA -3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -50A; IB= -500mA -4.5 V ICBO Collector Cutoff Current VCB=-120V;IE=0 VCB=-120V;IE=0; TC=150℃ -2.0 -5.0 mA ICEO Collector Cutoff Current VCE= -120V; IB= 0 -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -25A, VCE= -5V 1000 hFE-2 DC Current Gain IC= -50A, VCE= -5V 400 SPTECH website：www.superic-tech.com MIN TYP. MAX -120 UNIT V 18000 2