PMN230ENE
60 V, N-channel Trench MOSFET
16 April 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Trench MOSFET technology
Logic-level compatible
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
2
A
-
176
222
mΩ
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = 10 V; ID = 1.6 A; Tj = 25 °C
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .
PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
Graphic symbol
6
5
4
1
2
3
D
G
TSOP6 (SOT457)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
PMN230ENE
Package
Name
Description
Version
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
7. Marking
Table 4. Marking codes
Type number
Marking code
PMN230ENE
3E
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
2
A
VGS = 10 V; Tamb = 25 °C
[1]
-
1.6
A
VGS = 10 V; Tamb = 100 °C
[1]
-
1
A
-
7
A
[2]
-
475
mW
[1]
-
1.14
W
-
3.9
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.1
A
Source-drain diode
IS
[1]
[2]
source current
Tamb = 25 °C
[1]
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMN230ENE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
aaa-026731
10
ID
(A)
tp =
10 µs
Limit RDSon = VDS/ID
1
100 µs
1 ms
DC; Tsp = 25 °C
10-1
10 ms
DC; Tamb = 25 °C; 6 cm2
10-2
10-1
Fig. 3.
1
100 ms
10
102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
230
265
K/W
[2]
-
95
110
K/W
[2]
-
55
63
K/W
-
28
32
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
aaa-026732
103
Zth(j-a)
(K/W)
duty cycle = 1
0.5
102
0.25
0.1
10
0.75
0.33
0.2
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint.
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-026733
duty cycle = 1
0.75
0.5
Zth(j-a)
(K/W)
0.33
0.2
0.25
0.1
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1.3
1.7
2.7
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 10 V; ID = 1.6 A; Tj = 25 °C
-
176
222
mΩ
VGS = 10 V; ID = 1.6 A; Tj = 150 °C
-
352
444
mΩ
VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C
-
196
262
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 1.5 A; Tj = 25 °C
-
6.2
-
S
RG
gate resistance
f = 1 MHz
-
9
-
Ω
VDS = 30 V; ID = 1.5 A; VGS = 10 V;
Tj = 25 °C
-
3.9
5
nC
-
0.4
-
nC
-
0.7
-
nC
-
177
-
pF
-
15
-
pF
-
11
-
pF
-
6
-
ns
-
8
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
13
-
ns
tf
fall time
-
5
-
ns
-
0.85
1.2
V
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 30 V; ID = 1.5 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
PMN230ENE
Product data sheet
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
aaa-021866
6
VGS = 10 V
4.5 V
aaa-021867
10-3
3.5 V
ID
(A)
ID
(A)
min
10-4
4
typ
max
3.0 V
10-5
2
2.5 V
0
Fig. 6.
0
1
2
3
VDS (V)
10-6
4
0
1
2
VGS (V)
3
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-021868
600
2.5 V
3.0 V
aaa-021869
600
3.2 V
RDSon
(mΩ)
RDSon
(mΩ)
3.5 V
400
400
Tj = 150 °C
4.5 V
200
200
VGS = 10 V
0
0
2
4
ID (A)
Tj = 25 °C
0
6
Tj = 25 °C
Fig. 8.
Product data sheet
2
4
6
8
10
VGS (V)
ID = 1.5 A
Drain-source on-state resistance as a function
of drain current; typical values
PMN230ENE
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
aaa-021870
6
aaa-021871
2.0
a
ID
(A)
1.5
4
1.0
2
Tj = 150 °C
0.5
Tj = 25 °C
0
0
1
2
3
0
-60
4
VGS (V)
0
60
120
Tj (°C)
180
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-021872
4
aaa-021873
103
VGS(th)
(V)
C
(pF)
Ciss
3
102
max
2
Coss
10
typ
1
Crss
min
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMN230ENE
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
aaa-021874
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
2
0
QGS2
0
1
2
3
4
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
5
ID = 1.6 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-021875
3.2
IS
(A)
2.4
Tj = 150 °C
1.6
0.8
Tj = 25 °C
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
12. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.95
1.9
0.40
0.25
Dimensions in mm
0.26
0.10
18-03-11
Fig. 18. Package outline TSOP6 (SOT457)
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
13. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
5.3
1.5
(4×)
solder lands
1.475
0.45
(2×)
5.05
1.475
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMN230ENE v.1
20180416
Product data sheet
-
-
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
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and shall have no liability for the consequences of use of such information.
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Notwithstanding any damages that customer might incur for any reason
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PMN230ENE
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
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accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’ warranty of the product
for such automotive applications, use and specifications, and (b) whenever
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
customer uses the product for automotive applications beyond Nexperia’
specifications such use shall be solely at customer’s own risk, and (c)
customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
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between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PMN230ENE
Product data sheet
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PMN230ENE
Nexperia
60 V, N-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information........................................................ 10
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
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Nexperia B.V. 2018. All rights reserved
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Date of release: 16 April 2018
PMN230ENE
Product data sheet
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