PMV88ENEAR

PMV88ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 2.2 A - 88 117 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 2.2 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package PMV88ENEA Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PMV88ENEA HT% [1] % = placeholder for manufacturing site code PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 2 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 2.2 A VGS = 10 V; Tamb = 100 °C [1] - 1.6 A - 8.9 A [2] - 615 mW [1] - 1.26 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 7.5 W Tj junction temperature Tsp = 25 °C -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode IS source current Tamb = 25 °C [1] - 1.3 A HBM [3] - 2000 V - 8 mJ ESD maximum rating VESD electrostatic discharge voltage Avalanche ruggedness EDS(AL)S [1] [2] [3] non-repetitive drainTj(init) = 25 °C; ID = 0.25 A; DUT in source avalanche energy avalanche (unclamped) 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. aaa-026120 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-026121 120 25 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMV88ENEA Product data sheet 0 -75 225 Fig. 2. 125 Tj (°C) 225 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 7 May 2019 25 © Nexperia B.V. 2019. All rights reserved 3 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-029658 102 ID (A) 10 tp = 10 µs Limit RDSon = VDS/ID 100 µs 1 1 ms DC; Tsp = 25 °C 10-1 10-2 10-1 Fig. 3. 10 ms DC; Tamb = 25 °C; 6 cm2 100 ms 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 4 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 212 244 K/W [2] - 104 119 K/W - 17 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-021915 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 10 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-021916 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.20 10 0.50 0.25 0.10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 5 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.3 1.7 2.7 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 10 V; ID = 2.2 A; Tj = 25 °C - 88 117 mΩ VGS = 10 V; ID = 2.2 A; Tj = 175 °C - 191 254 mΩ RDSon drain-source on-state resistance VGS = 4.5 V; ID = 2 A; Tj = 25 °C - 104 146 mΩ gfs forward transconductance VDS = 10 V; ID = 2 A; Tj = 25 °C - 8.5 - S RG gate resistance f = 1 MHz - 10 - Ω VDS = 30 V; ID = 2.2 A; VGS = 10 V; Tj = 25 °C - 4 6 nC - 0.5 - nC - 0.9 - nC - 196 - pF - 24 - pF - 15 - pF - 3 - ns - 6 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 8 - ns tf fall time - 3 - ns VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 30 V; ID = 2.2 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 1.3 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V trr reverse recovery time - 11 - ns Qr recovered charge IS = 0.8 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 4 - nC PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 6 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-029686 10.0 VGS = 10 V ID (A) aaa-029687 10-3 ID (A) 4.5 V 7.5 3.0 V 10-4 2.6 V 10-5 min typ max 5.0 2.5 2.2 V 0 Fig. 6. 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-029688 600 aaa-029659 400 RDSon (mΩ) RDSon 2.6 V 3.0 V 300 400 Tj = 175 °C 200 200 4.5 V Tj = 25 °C 100 VGS = 10 V 0 0 2 4 6 ID (A) 0 8 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 VGS (V) 10 ID = 4 A Drain-source on-state resistance as a function of drain current; typical values PMV88ENEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 7 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-029660 10 aaa-029661 2.5 ID (A) a 8 2.0 6 1.5 4 1.0 Tj = 175 °C Tj = 25 °C 2 0 0.5 0 1 2 3 VGS (V) 0 -60 4 0 60 120 Tj (°C) 180 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-029662 4 aaa-029663 103 VGS(th) (V) 3 C (pF) max 2 Ciss 102 typ Coss min 1 Crss 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 250µA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV88ENEA 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 8 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-029664 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 2 0 QGS2 0 1 2 3 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 4 VDS = 30 V; ID = 2.2 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-029665 4 IS (A) 3 2 Tj = 175 °C Tj = 25 °C 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 9 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 10 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 11 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 12 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV88ENEA v.1 Product data sheet - - PMV88ENEA Product data sheet 20190507 All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 13 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 14 / 15 PMV88ENEA Nexperia 60 V, N-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 7 May 2019 PMV88ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2019 © Nexperia B.V. 2019. All rights reserved 15 / 15