PSMN0R9-30ULDX

PSMN0R9-30ULD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits • • • • • • • • • • • Improved creepage and clearance – meets the requirements of UL2595 300 A capability Avalanche rated, 100% tested at IAS = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C Wave solderable; exposed leads for optimal visual solder inspection 3. Applications • • • Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN0R9-30YLD 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 30 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 300 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 227 W Tj junction temperature -55 - 150 °C [1] PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.79 1.09 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.65 0.87 mΩ Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge ID = 25 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 13.5 - nC QG(tot) total gate charge ID = 25 A; VDS = 15 V; VGS = 10 V; Fig. 12; Fig. 13 - 109 - nC IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V; Fig. 16 - 0.9 - Source-drain diode S [1] softness factor 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D G mbb076 1 2 3 S 4 sot1023a_sv LFPAK56-UL2595 (SOT1023A) 6. Ordering information Table 3. Ordering information Type number PSMN0R9-30ULD PSMN0R9-30ULD Product data sheet Package Name Description Version LFPAK56-UL 2595 plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch SOT1023A All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 2 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 7. Marking Table 4. Marking codes Type number Marking code PSMN0R9-30ULD 0D93UL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 227 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 300 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 284 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1592 A [1] IDM peak drain current Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C Tsld(M) peak soldering temperature - 260 °C VESD electrostatic discharge voltage HBM 2 - kV Source-drain diode IS source current Tmb = 25 °C - 242 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1800 A [2] - 2575 mJ [2] - 190 A Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy IAS non-repetitive avalanche Vsup ≤ 30 V; VGS = 10 V; Tj(init) = 25 °C; current RGS = 50 Ω [1] [2] ID = 25 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 6.1 ms 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Protected by 100% test PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 3 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 03ne36 120 aaa-020460 500 ID (A) Pder (%) 400 80 300 (1) 200 40 100 0 Fig. 1. 0 50 100 150 Tmb (° C) 0 200 25 50 75 100 125 150 175 Tmb (°C) 200 (1) 300A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature Normalized total power dissipation as a function of mounting base temperature Fig. 2. ID (A) 0 Continuous drain current as a function of mounting base temperature aaa-027871 104 103 Limit RDSon = VDS / ID tp = 10 µs 102 100 µs DC 10 1 ms 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 4 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.45 0.55 K/W Rth(j-a) thermal resistance from junction to ambient Fig. 5 - 50 - K/W Fig. 6 - 125 - K/W aaa-027870 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 0.02 10-2 single shot P δ= Fig. 4. 10-5 10-4 10-3 10-2 T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration aaa-005751 aaa-005750 Fig. 5. T t tp 10-3 10-6 tp PCB layout for thermal resistance junction to ambient 1” square pad; FR4 Board; 2oz copper PSMN0R9-30ULD Product data sheet Fig. 6. PCB layout for thermal resistance junction to ambient minimum footprint;FR4 board; 2oz copper All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 5 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C 1.2 1.5 2.2 V ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature 25 °C ≤ Tj ≤ 150 °C - -4.5 - mV/K IDSS drain leakage current VDS = 24 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 24 V; VGS = 0 V; Tj = 125 °C - 3.7 - µA VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.79 1.09 mΩ VGS = 4.5 V; ID = 25 A; Tj = 150 °C; Fig. 10; Fig. 11 - - 1.8 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.65 0.87 mΩ VGS = 10 V; ID = 25 A; Tj = 150 °C; Fig. 10; Fig. 11 - - 1.44 mΩ f = 1 MHz - 1.4 - Ω ID = 25 A; VDS = 15 V; VGS = 10 V; Fig. 12; Fig. 13 - 109 - nC ID = 25 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 51 - nC ID = 0 A; VDS = 0 V; VGS = 0 V - 99 - nC ID = 25 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 15.3 - nC - 10.5 - nC Static characteristics V(BR)DSS IGSS RDSon RG gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 4.8 - nC QGD gate-drain charge - 13.5 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 15 V; Fig. 12; Fig. 13 - 2.4 - V Ciss input capacitance - 7668 - pF Coss output capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 14 - 2914 - pF Crss reverse transfer capacitance - 445 - pF PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 6 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 38.1 - ns tr rise time VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V; RG(ext) = 5 Ω - 49.8 - ns td(off) turn-off delay time - 63 - ns tf fall time - 42.6 - ns Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 83.11 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.76 1.2 V trr reverse recovery time - 52 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V; Fig. 16 - 67 - nC ta reverse recovery rise time - 27.4 - ns tb reverse recovery fall time - 24.7 - ns S softness factor - 0.9 - [1] [1] includes capacitive recovery aaa-011698 180 ID (A) 10 V VGS = 3 V 2.8 V RDSon (mΩ) aaa-011700 6 5 135 4 2.6 V 90 3 2 45 2.4 V 1 2.2 V 0 Fig. 7. 0 0.5 1 1.5 2 VDS (V) 0 2.5 Output characteristics; drain current as a Fig. 8. function of drain-source voltage; typical values PSMN0R9-30ULD Product data sheet 0 2 6 8 10 12 14 VGS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 23 May 2018 4 © Nexperia B.V. 2018. All rights reserved 7 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology aaa-011701 200 ID (A) aaa-011702 12 RDSon (mΩ) 160 2.4 V 2.6 V 2.8 V 9 120 6 80 40 150°C 3 Tj = 25°C 3V 4.5 V 0 Fig. 9. 0 0.5 1 1.5 2 2.5 3 VGS (V) 0 3.5 Transfer characteristics; drain current as a function of gate-source voltage; typical values 25 50 75 100 125 150 175 ID (A) 200 Fig. 10. Drain-source on-state resistance as a function of drain current; typical values VDS ID 10 V 1.6 VGS(pl) 1.2 VGS(th) VGS = 4.5 V 0.8 VGS QGS2 QGS1 0.4 0 -60 0 003aal037 2 a VGS = 10 V -30 0 30 60 90 120 150 Tj (°C) QGS QGD QG(tot) 003aaa508 Fig. 12. Gate charge waveform definitions 180 Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 8 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology VGS (V) aaa-011703 10 aaa-011705 105 C (pF) 8 104 Ciss 6 24 V Coss 15 V 4 103 VDS = 6 V Crss 2 0 0 20 40 60 80 100 QG (nC) 102 10-1 120 10 VDS (V) 003aal160 aaa-011706 103 102 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig. 13. Gate-source voltage as a function of gate charge; typical values IS (A) 1 ID (A) 102 trr ta 0.25 IRM 1 10-1 tb 0 10 150°C 0 0.2 Tj = 25°C 0.4 0.6 0.8 IRM 1 VSD (V) t (s) 1.2 Fig. 16. Reverse recovery timing definition Fig. 15. Source current as a function of source-drain voltage; typical values PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 9 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 11. Package outline Plastic single-ended surface-mounted package (LFPAK56); 4 leads E A SOT1023A E1 A b1 b2 (3x) c1 mounting base D1 D H L (4x) 1 2 3 4 b (4x) e (3x) C w X c A A1 A2 Lp detail X 0 2.5 θ y C 5 mm scale Dimensions Unit mm A A1 A2 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 nom 0.25 0.85 min 0.95 0.00 0.35 3.62 0.19 0.24 4.45 3.8 5.30 3.7 3.6 4.95 3.5 e 1.27 H L Lp 6.2 1.3 0.85 5.9 0.8 0.40 w y 0.25 0.1 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version SOT1023A JEDEC 8° 0° sot1023a_po References IEC θ JEITA European projection Issue date 17-05-29 17-06-02 --- Fig. 17. Package outline LFPAK56-UL2595 (SOT1023A) PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 10 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PSMN0R9-30ULD Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 11 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 12 / 13 PSMN0R9-30ULD Nexperia N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 3 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Package outline........................................................ 10 12. Legal information.......................................................11 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 23 May 2018 PSMN0R9-30ULD Product data sheet All information provided in this document is subject to legal disclaimers. 23 May 2018 © Nexperia B.V. 2018. All rights reserved 13 / 13