S8 050
TRANSISTOR(NPN)
SOT-23
FEATURES
Complimentary to S8550
z
z
Collector Current: IC=0.5A
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V ,
0.1
μA
HFE(1)
VCE=1V,
IC= 50mA
120
HFE(2)
VCE=1V,
IC= 500mA
50
IC=0
350
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500 mA, IB= 50mA
1.2
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
１
VCE=6V,
f=30MHz
IC= 20mA
150
MHz
hFE(1)
L
H
120-200
200-350
S8 050
２
