AO3400

AO3400 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 27mΩ @ 4.5V 30 V SOT-23 ID RDS(on)Typ 3 5.8A 29mΩ @ 3.3V  1. GATE 2. SOURCE 3. DRAIN FEATURE 1 2 Exceptional on-resistance and maximum DC current capability APPLICATION Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent circuit z High dense cell design for extremely low RDS(ON) D A09T G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS Gate-Source Voltage VGS TA=25℃ Continuous Drain Current Maximum Power Dissipation 2) Pulsed Drain Current 1) Operating Junction and Storage Temperature Range TA=70℃ TA=25℃ TA=70℃ Limit 30 5.8 1.5 A 23 150 o -50 to 150 o TJ RθJA W 0.9 IDM Thermal Resistance Junction-Ambient A 4.6 PD Tstg V ±12 ID Storage Temperature Range Unit 100 C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) The above data are for reference only. DN:T20321A0 http://www.microdiode.com Rev:2020A0 Page :1 AO3400 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current V(BR) DSS VGS = 0V, ID =250uA 30 V IDSS VDS =24V,VGS = 0V 1 uA IDSS VDS =24V,VGS = 0V 100 uA IGSS VGS =±12V, VDS = 0V ±100 nA On characteristics Drain-source on-resistance (note 3) Forward tranconductance Gate threshold voltage RDS(on) gFS VGS(th) VGS =4.5V, ID =5.8A 27 32 mΩ VGS =3.3V, ID =4A 29 45 mΩ VGS =2.5V, ID=2A 35 50 mΩ VDS =5V, ID =5A VDS =VGS, ID =250uA 8 0.5 S 0.8 1.2 V Dynamic Characteristics (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg 635 pF 135 pF 40 pF VDS=15V 10.5 nC VDS =15V,VGS =0V,f =1MHz Gate Source Charge Qgs ID=5A, 1.6 nC Gate Drain Charge Qgd VGS=4.5V 2.7 nC VDD=15V, 7.5 ns ID=5A, 18 ns td(off) RG=3.3Ω, 36 ns tf VGS=4.5V 5 ns Switching Characteristics (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr Drain-source diode characteristics and maximum ratings Source drain current(Body Diode) ISD TA=25℃ Diode forward voltage (note 3) VSD IS=3A,VGS=0V 0.82 1.5 A 1.2 V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤ 2%. 4. Guaranteed by design, not subject to production testing. http://www.microdiode.com Rev:2020A0 Page :2 AO3400 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage ISD, Reverse Drain Current (A) -ID - Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :3 AO3400 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :4 AO3400 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.40 1.60 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :5