MMBT2907A

MMBT2907A SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP) SOT-23 FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR MARKING: 2F (3)C 2F (1)B (2)E ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=-10μA,IE 0 V(BR)CBO -60 V Collector-emitter breakdown voltage = IC=-10mA,IB 0 V(BR)CEO* -60 V Emitter-base breakdown voltage = IE=-10μA,IC 0 V(BR)EBO -5 V Collector cut-off current VCB=-50V,IE 0 I= CBO -20 nA Base cut-off current = VEB=-3V, IC 0 IEBO -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) = -0.5V -50 nA hFE(1) VCE= -10V,IC= -150mA 100 hFE(2) VCE=-10V,IC=-0.1mA 75 hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 hFE(5) VCE=-10V,IC=-500mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat)* IC=-150mA,IB=-5mA -0.4 V VCE(sat)* = IC=-500mA,IB -50mA -1.6 V VBE(sat)* = IC=-150mA,IB -15mA -1.3 V VBE(sat)* = IC=-500mA,IB -50mA -2.6 V Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf *Pulse test: tp≤300μs, δ≤0.02. http://www.microdiode.com 300 VCE=-20V,I =C -50mA,f = 100MHz 200 MHz 10 VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA CLASSIFICATION OF hFE ns 25 ns 225 ns 60 ns RANK L H RANGE 100-200 200-300 Rev:2025A3 Page :1 MMBT2907A Typical Characteristics Static Characteristic -0.25 hFE 500 —— IC COMMON EMITTER VCE=-10V -800uA -0.20 hFE -640uA -0.15 DC CURRENT GAIN COLLECTOR CURRENT 400 -720uA IC (A) COMMON EMITTER Ta=25℃ -560uA -480uA -0.10 -400uA -320uA -240uA -0.05 300 Ta=100℃ Ta=25℃ 200 100 -160uA IB=-80uA -0.00 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -0.9 —— -10 VCE 0 -0.1 -12 IC -100 -10 COLLECTOR CURRENT VBEsat -1.2 β=10 IC -0.6 Ta=100℃ -0.3 Ta=25℃ -0.0 —— IC Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -1 -100 -10 COLLECTOR CURRENT IC IC -1 -600 (mA) -100 -10 COLLECTOR CURRENT —— VBE 100 -600 Cob/ Cib IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) IC (mA) Ta=25℃ Cib -100 CAPACITANCE Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMMITER VOLTAGE VBE (V) Pc 300 —— Cob C Ta=100℃ -10 -600 (mA) COMMON EMITTER VCE=-10V COLLECTOR CURRENT -600 (mA) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 (V) 10 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE http://www.microdiode.com 100 Ta 125 150 (℃ ) Rev:2025A3 Page :2 MMBT2907A Outlitne Drawing SOT-23 Package Outline Dimensions 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2025A3 Page :3 MMBT2907A SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2025A3 Page :4