MMBT4401

MMBT4401 TRANSISTOR (NPN) FEATURES Switching transistor SOT-23 MARKING ：MMBT4401=2X 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 5 V Collector cut-off current ICBO VCB=-35V, IE=0 0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 0.1 μA DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA 0.95 V Transition frequency １　 fT VCE= -10V, IC= -20mA f = 100MHz 250 MHz MMBT4401 ２ MMBT4401 ３