MMBT4401

MMBT4401 TRANSISTOR(NPN) FEATURES Switching transistor SOT-23 MARKING ：2X 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol ymbo Value Units VCBO Collector-Base Voltage meter 60 0 V VCEO Collector-Emitter Voltage 40 0 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 00 mA PC Collector Power dissipation 0.3 . W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RӨJA Thermal Resistance, junction to Ambient 417 ℃/mW 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Min Test conditions Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C = 1 mA, I B = 0 40 V Emitter-base breakdown voltage V (BR)EBO I E = 100uA, I C = 0 6 V Collector cut-off current I CBO V CB = 50V, I E = 0 0.1 uA Collector cut-off current I CEX V CE = 35V, V EB =0.4V 0.1 uA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 uA h FE1 V CE = 1V, I C =0.1mA 20 h FE2 V CE = 1V, I C =1mA 40 h FE3 V CE = 1V, I C =10mA 80 h FE4 V CE = 1V, I C = 150mA 100 h FE5 V CE = 2V, I C = 500mA 40 DC current gain Collector-emitter saturation voltage V CE(sat) Base-emitter saturation voltage V BE(sat) Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf 300 I C = 150mA, I B = 15mA 0.4 V I C = 500mA, I B = 50mA 0.75 V I C = 150mA, I B = 15mA 0.95 V I C = 500mA, I B = 50mA 1.2 V V CE = 10V, I C = 20mA, f=100MHz 250 V C C =30V,V BE(off) =-2V I C =150mA, I B1 =15mA V CC = 30V, I C = 150mA I B1 =I B2 =15mA MH Z 15 ns 20 ns 225 ns 60 ns The above data are for reference only. https://www.microdiode.com Rev:2024A2 Page :1 MMBT4401 Typical Characteristics Static Characteristic 250 —— IC COMMON EMITTER VCE= 1V 1mA Ta=100℃ hFE 0.9mA 0.8mA 0.7mA 150 COLLECTOR CURRENT DC CURRENT GAIN I C (mA) 200 hFE 1000 COMMON EMITTER Ta=25℃ 0.6mA 0.5mA 100 0.4mA 0.3mA 50 Ta=25℃ 100 0.2mA IB=0.1mA 0 0 1 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 4 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 600 100 (mA) IC β=10 β=10 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC 600 —— IC Ta=100 ℃ 100 Ta=25℃ 10 00..51 600 1 10 COLLECTOR CURREMT (mA) VBE fT 500 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— 600 100 IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=1V (mA) 10 COLLECTOR CURRENT VCE (V) 1 0.1 0 200 600 400 800 1000 100 10 1200 10 BASE-EMMITER VOLTAGE VBE (mV) 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ CAPACITANCE C (pF) Cib 10 Cob REVERSE VOLTAGE https://www.microdiode.com V (V) 10 30 —— IC 30 40 (mA) Ta 300 200 100 0 1 PC 400 f=1MHz IE=0/IC=0 1 0.1 20 COLLECTOR CURRENT 0 25 The curve above is for reference only. 50 75 AMBIENT TEMPERATURE Rev:2024A2 100 Ta (℃ ) 125 150 Page :2 MMBT4401 Outlitne Drawing SOT-23 Package Outline Dimensions θ A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.55 10° 0.4 0° Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' https://www.microdiode.com Rev:2024A2 Page :3