MMBT5551
SOT-23 Plastic-Encapsulate Transistors
MMBT5551
TRANSISTOR (NPN)
SOT-23
FEATURES
z Complementary to MMBT5401
z Ideal for Medium Power Amplification and Switching
1. BASE
2. EMITTER
3. COLLECTOR
MARKING:G1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
0.6
A
PC
Collector Power Dissipation
0.3
W
Thermal Resistance From Junction To Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
(3)C
G1
(1)B
RΘJA
(2)E
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Test
conditions
Min
Typ
Unit
IC=100µA, IE=0
180
V
IC=1mA, IB=0
160
V
IE=10µA, IC=0
6
V
=
VCB 120V,IE 0
ICBO=
VEB=4V,IC=0
IEBO
Max
hFE(1)
*
VCE=5V, IC=1mA
80
hFE(2)
*
VCE=5V, IC=10mA
100
hFE(3)
*
VCE=5V, IC=50mA
50
50
nA
50
nA
300
VCE(sat)1*
IC=10mA, IB=1mA
0.15
V
*
IC=50mA, IB=5mA
0.2
V
VBE(sat)1
*
IC=10mA, IB=1mA
1
V
VBE(sat)2
*
IC=50mA, IB=5mA
1
V
300
MHz
6
pF
VCE(sat)2
Transition frequency
fT
ICE=10V, IC=10mA,f=30MHz
Collector output capacitance
Cob
VCB=10V, IE=0,f=1MHz
100
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
RANGE
http://www.microdiode.com
L
H
100–200
200–300
Rev:2024A1
Page :1
MMBT5551
Typical Characteristics
Static Characteristic
18
500
80uA
15
COMMON EMITTER
VCE=5V
COMMON
EMITTER
Ta=25℃
60uA
50uA
9
40uA
6
30uA
Ta=25℃
100
IB=20uA
3
0
10
0
2
6
8
10
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1.0
VCE
12
1
COLLECTOR CURRENT
IC
IC
200
100
200
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
0.2
0.1
0.1
Ta=100℃
Ta=25℃
0.01
1
10
COLLECTOR CURRENT
VBE
——
100
IC
1
200
10
(mA)
COLLECTOR CURRENT
IC
——
Cob / Cib
100
200
IC
(mA)
VCB / VEB
COMMON EMITTER
VCE=5V
f=1MHz
IE=0 / IC=0
CAPACITANCE
C
Ta=100℃
Ta=25℃
Cib
(pF)
IC (mA)
100
100
(mA)
VCEsat ——
B IC
0.3
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
10
(V)
β=10
COLLECTOR CURRENT
Ta=100℃
hFE
70uA
12
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
90uA
Ta=25℃
10
1
0.2
0.4
0.6
BASE-EMITTER VOLTAGE
fT
——
0.8
Cob
1
0.1
1.0
VBE(V)
10
1
10
REVERSE VOLTAGE
IC
PC
0.4
150
——
V
20
(V)
Ta
VCE=10V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (W)
(MHz)
Ta=25℃
100
50
0.3
0.2
0.1
0.0
1
10
3
COLLECTOR CURRENT
http://www.microdiode.com
IC
(mA)
20
30
0
25
50
75
AMBIENT TEMPERATURE
Rev:2024A1
100
Ta
125
150
(℃ )
Page :2
MMBT5551
Outlitne Drawing
SOT-23 Package Outline Dimensions
e
Suggested Pad Layout
0.037
0.95
0.037
0.95
L
L1
E
E1
Symbol
A
A1
b
c
D
E
E1
e
L
L1
θ
Dimensions In Millimeters
Min
Typ
Max
0.90
1.40
0.10
0.00
0.30
0.50
0.20
0.08
2.80
2.90
3.10
1.20
1.60
2.80
2.25
1.80
1.90
2.00
0.10
0.50
0.4
0°
0.55
10°
Note:
1. Controlling dimension:in/millimeters.
2. General tolerance: ±0.05mm.
3. The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
http://www.microdiode.com
inches
mm
Rev:2024A1
Page :3
MMBT5551
SOT-23 Tape and Reel
Packaging Description:
SOT-23 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film,adhesive laye,sealant,
and anti-static sprayed agent.These reeled parts In
standard option are shipped with 3,000 units per 7"
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
3000 pcs
http://www.microdiode.com
7 Inch
45,000 pcs
203×203×195
180,000 pcs
438×438×220
Rev:2024A1
Page :4
