S9012
PNP Silicon Epitaxial Planar Transistors
for switching and amplifier applications.
FEATURES
z High Collector Current.
z Complementary to S9013.
z Excellent hFE Linearity.
SOT-23 Plastic Package
MARKING: 2T1
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
-40
V
Collector Emitter Voltage
VCEO
-25
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Power Dissipation
Ptot
300
mW
Tj
150
Thermal Temperature From Junction To Ambient
RΘJA
416
Storage Temperature Range
Tstg
- 55 to + 150
Junction Temperature
C
O
℃/W
C
O
Characteristics at Ta = 25 OC
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC=-0.1mA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IC=-1mA, IB=0
IE=-0.1mA, IE=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1
uA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
uA
hFE(1)
Parameter
conditions
Collector-emitter saturation voltage
VCE(sat)
VCE=-1V, IC=50mA
IC=-500mA, IB=-50mA
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
DC current gain
fT
Transition frequency
Cob
Collector output capacitance
Min
120
VCE=-6V,IC=-20mA, f=30MHz
Typ
Max
Unit
400
-0.6
V
-1.2
V
150
MHz
VCB=-10V, IE=0, f=1MHz
5
CLASSIFICATION OF hFE(1)
RANK
L
H
J
RANGE
120-200
200-350
300-400
pF
S9012
Typical Characteristics
Static Characteristic
-100
(mA)
-350uA
-80
Ta=100℃
IC
hFE
-300uA
DC CURRENT GAIN
COLLECTOR CURRENT
-250uA
-60
IC
COMMON EMITTER
VCE=-1V
COMMON
EMITTER
Ta=25℃
-400uA
——
hFE
400
-200uA
-150uA
-40
-100uA
300
Ta=25℃
200
100
-20
IB=-50uA
0
-0
-4
-8
-12
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-1000
——
VCE
-10
IC
Ta=25℃
-10
IC
(mA)
IC
——
VBEsat
-1.2
-500
-100
COLLECTOR CURRENT
(V)
Ta=100℃
-100
-1
-20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-0
Ta=25℃
-0.8
Ta=100℃
-0.4
β=10
-1
-1
-10
COLLECTOR CURRENT
fT
500
IC
-1
(mA)
-10
-100
COLLECTOR CURRENT
—— IC
100
Cob/ Cib
——
IC
(MHz)
-500
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
VCE=-6V
o
Ta=25 C
Ta=25℃
Cob
CAPACITANCE
C
TRANSITION FREQUENCY
(pF)
fT
Cib
100
-5
-10
-100
COLLECTOR CURRENT
Pc
400
COLLECTOR POWER DISSIPATION
Pc (mW)
β=10
-0.0
-500
-100
——
IC
(mA)
Ta
200
100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
1
-0.1
-1
REVERSE VOLTAGE
300
0
10
150
-10
V
(V)
-20
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