SS8050

SS8050 SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) SOT-23 FEATURES z Complementary to SS8550 MARKING: Y1 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A PC Collector Power Dissipation 0.3 W Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol ol Test conditions Typ Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 120 hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1.0 V Transition frequency fT VCE=10V, IC=50mA f=30MHz Collector output capacitance Cob VCB=10V, IE=0mA f=1MHz DC current gain 400 100 MHz 20 pF CLASSIFICATION OF hFE (1) Rank L H J Range 120-200 200-350 300-400 http://www.microdiode.com Rev:2024A1 Page :1 SS8050 Typical Characteristics Static Ch aracteristic 140 COMMON EMITTER Ta=25℃ 500uA 120 450uA DC CURRENT GAIN hFE IC COMMON EMITTER VCE=1V 300 350uA 80 IC Ta=100℃ 400uA 100 COLLECTOR CURRENT (mA) hFE —— 1000 300uA 250uA 60 200uA 40 150uA Ta=25℃ 100 30 100uA 20 IB=50uA 0 0.0 10 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 VCE 2.5 1 10 3 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 300 Ta=100℃ 100 Ta=25℃ 30 10 1000 1500 300 IC (mA) IC VBEsat —— IC —— 100 30 COLLECTOR CURRENT (V) 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 3 β=10 β=10 1 0.2 1 10 3 100 30 COLLECTOR CURRENT VBE 300 IC 1000 1500 1 30 10 3 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 1500 1000 IC (mA) VCB/ VEB —— f=1MHz IE=0/IC=0 100 Ta=100℃ C CAPACITANCE (pF) IC COLLCETOR CURRENT (mA) Ta=25℃ Cib 300 100 30 Ta=25℃ 10 1000 1500 300 30 Cob 10 3 3 COMMON EMITTER VCE=1V 1 0.2 0.4 0.6 0.8 BASE-EMMITER VOLTAGE fT 1000 —— 1.0 VBE 1 0.1 1.2 3 1 0.3 (V) REVERSE VOLTAGE IC PC 350 —— V 10 20 (V) Ta 300 300 fT 250 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) 100 30 10 3 VCE=10V 200 150 100 50 Ta=25℃ 1 0 1 3 10 COLLECTOR CURRENT http://www.microdiode.com 30 I (mA) C 100 0 25 50 75 100 AMBIENT TEMPERATURE Rev:2024A1 Ta 125 150 (℃) Page :2 SS8050 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2024A1 Page :3 SS8050 SOT-23 Tape and Reel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 3000 pcs http://www.microdiode.com 7 Inch 45,000 pcs 203×203×195 180,000 pcs 438×438×220 Rev:2024A1 Page :4