SS54BF

SS54BF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMBF

  • 描述:

    肖特基二极管 VR=40V IF=5A VF=0.55V IR=1000uA

  • 详情介绍
  • 数据手册
  • 价格&库存
SS54BF 数据手册
SS52BF THRU SS520BF Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features SMBF  Metal silicon junction, majority carrier conduction For surface  mounted applications 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90)  Low power loss,high efficiency  High forward surge current capability  For use in low voltage,high frequency inverters, free 0.173(4.40) 0.165(4.20) wheeling,and polarity protection applicatlons 0.051(1.30) 0.043(1.10) Mechanical Data 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) 0.216(5.50) 0.200(5.10) Case: JEDEC 60B) molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.002 ounce, 0.057 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SS52BF SS53BF SS54BF SS55BF SS56BF SS58BF Parameter Marking Code SYMBOLS Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage Maximum DC blocking voltage VRMS VDC Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current at rated DC blocking voltage MDD S52B 20 14 20 MDD S53B 30 21 30 MDD S54B 40 28 40 MDD S55B 50 35 50 MDD S56B 60 42 60 SS510BF MDD S58B MDD S510B 80 56 80 100 70 100 SS515BF SS520BF MDD S515B 150 105 150 MDD S520B 200 140 200 UNITS V V V I(AV) 5.0 A IFSM 120 A VF 0.55 0.70 V 0.85 1.0 50 TA=25℃ TA=100℃ Typical junction capacitance (NOTE 1) CJ Typical thermal resistance (NOTE 2) RJA 45 ℃/W Operating junction temperature range TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage temperature range IR 800 mA 500 pF Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas http://www.microdiode.com Rev:2024A2 Page :1 SS52BF THRU SS520BF Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve Average Forward Current (A) 5.0 4.0 3.0 2.0 1.0 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) 6.0 10 4 10 3 10 2 TJ=100°C TJ=75°C 101 TJ=25°C 0 10 0 Case Temperature (°C) 20 40 60 100 80 Percent of Rated Peak Reverse Voltage(%) Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 20 TJ=25°C 1000 Junction Capacitance (pF) Instaneous Forward Current (A) 10 1 SS52BF/SS54BF SS56BF SS58BF/SS520BF 0.1 0 1.0 0.5 1.5 100 10 SS52BF/SS54BF SS56BF-SS520BF 1 2.0 0.1 W) °C / 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance( Peak Forward Surage Current (A) 140 00 10 100 Fig.6- Typical Transient Thermal Impedance Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 20 1 Reverse Voltage (V) Instaneous Forward Voltage (V) 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 SS52BF THRU SS520BF Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 E F B A W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Rev:2024A2 Page :3
SS54BF
物料型号:SS52BF至SS520BF

器件简介:这些是表面安装型肖特基势垒整流器,适用于低电压、高频率逆变器、自由轮转和极性保护应用。

引脚分配:文档中未明确提供引脚分配图,但根据图示,阳极带位于顶部视图的左侧。

参数特性: - 反向电压:20至200伏特 - 正向电流:5.0安培 - 低功耗、高效率 - 高正向浪涌电流能力

功能详解: - 金属硅结、多数载流子导电 - 适用于表面安装应用 - 适用于低电压、高频率逆变器、自由轮转和极性保护应用

应用信息: - 用于低电压、高频率的逆变器 - 用于自由轮转和极性保护

封装信息: - 封装类型:JEDEC SMBF塑封体 - 引脚:可按MIL-STD-750方法2026焊接的引线 - 安装位置:任意 - 重量:57毫克/0.002盎司

最大额定值和电气特性: - 工作结温范围:-50至+150摄氏度 - 最大瞬时正向电压(5.0A):根据型号不同,范围在100至200伏特 - 最大平均正向整流电流:根据型号不同,范围在70至150安培 - 峰值正向浪涌电流:根据型号不同,范围在80至500安培 - 最大重复峰值反向电压:根据型号不同,范围在20至100伏特 - 最大直流阻断电压(VRRM):根据型号不同,范围在20至200伏特 - 最大直流反向电流(I(RM)):根据型号不同,范围在0.55至1.0安培 - 典型结电容:根据型号不同,范围在20至60皮法拉 - 最大RMS电压:根据型号不同,范围在28至42伏特 - 典型热阻(RθJA):800摄氏度/瓦特 - 存储温度范围:-50至+125摄氏度

特性曲线图提供了正向电流降额曲线、典型反向特性、正向特性、结电容、最大非重复峰值正向浪涌电流和瞬态热阻等信息。
SS54BF 价格&库存

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SS54BF
  •  国内价格
  • 10+0.38640
  • 100+0.35190
  • 500+0.31740
  • 1000+0.28290
  • 2000+0.25990
  • 4000+0.25300

库存:17265

SS54BF
  •  国内价格
  • 1+0.21600
  • 50+0.16200
  • 150+0.13500
  • 1000+0.12370

库存:2221

SS54BF
  •  国内价格
  • 10+0.32950

库存:10

SS54BF
  •  国内价格
  • 20+0.66520
  • 100+0.39670
  • 500+0.27770
  • 5000+0.19840
  • 10000+0.18840
  • 50000+0.17460

库存:89