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KBU1010

KBU1010

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_22.9X6.28MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=10A,IFSM=200A,VF=1.0V,IR=10uA

  • 数据手册
  • 价格&库存
KBU1010 数据手册
KBU10005 thru KBU1010 10 A Single-Phase Silicon Bridge Rectifier Rectifier Reverse Voltage 50 to 1000V 6.8 + 0.2 23.2 + 0.5 3.85 + 0.25 4.4 + 0.2 1.95 + 0.25 Features Ideal for P.C. Board mounting High surge current capability This series is UL listed under the Recognized Component Index, file number E142814 The plastic material used carries Underwriters Laboratory flammability recognition 94V-0 High temperature soldering guaranteed 265 C /10 seconds at 5 lbs (2.3kg) tension 17.3 + 0.5 19.3 MAX. _ 1.9 R. TYP. (2PLACES) ~ ~ + 10.8 + 0.5 4.9 + 0.2 25.4 MIN. Mechanical Data Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-202, Method 208 Polarity: Polarity symbols molded on body Mounting Position:: Any Mounting Torque: 5 in-lbs max. Weight: 0.3 ounce, 8.0 grams (approx) 5.1+ 0.5 5.6+ 0.5 Maximum Ratings & Thermal Characteristics 1.3 + 0 0.1 Dimensions in millimeters(1mm =0.0394") Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz. For Capacitive load derate current by 20%. KBU KBU KBU KBU KBU Parameter Symbol 10005 1001 1002 1004 1006 KBU 1008 KBU 1010 unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS bridge input voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified output current at TA=100 C IF(AV) 10 A Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) IFSM 300 A I2 t 300 A sec Typical thermal resistance per element (1) ReJA 2.7 Operating junction and storage temperature range TJ, TSTG -55 to + 150 Rating for fusing ( t
KBU1010 价格&库存

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KBU1010
    •  国内价格
    • 1+1.99900

    库存:7

    KBU1010
    •  国内价格
    • 1+1.38360
    • 10+1.28160
    • 30+1.26120
    • 100+1.20000

    库存:476