PMEG6010CEGW
60 V, 1 A Low VF MEGA Schottky barrier rectifier
24 November 2016
Product data sheet
1. General description
Planar Maxium Efficiency General Application (MEGA) Schottky barrier diode rectifier with an
integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted
Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Forward current: IF ≤ 1 A
Reverse voltage VR ≤ 60 V
Low foward voltage, typ. VF = 570 mV
Low reverse current, typ. IR = 11 µA
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tsp ≤ 55 °C
-
-
1
A
VR
reverse voltage
Tj = 25 °C
-
-
60
V
VF
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
570
660
mV
IR
reverse current
VR = 60 V; pulsed; Tj = 25 °C
-
11
50
µA
[1]
Very short test pulse to prevent junction self-heating.
[1]
PMEG6010CEGW
Nexperia
60 V, 1 A Low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
[1]
Simplified outline
Graphic symbol
[1]
1
2
SOD123
1
2
sym001
The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
PMEG6010CEGW
Package
Name
Description
Version
SOD123
Plastic surface-mounted package; 2 leads
SOD123
7. Marking
Table 4. Marking codes
Type number
Marking code
PMEG6010CEGW
G7
PMEG6010CEGW
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF
forward current
Tsp ≤ 55 °C
-
1
A
-
1
A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 135 °C; square
wave
-
1
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 70 °C; square
wave
[1]
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ ≤ 0.25
-
7
A
IFSM
non-repetitive peak
forward current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
9
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
410
mW
[1]
-
675
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Rth(j-a)
Rth(j-sp)
[1]
[2]
[3]
[4]
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1] [2]
-
-
305
K/W
[1] [3]
-
-
185
K/W
[4]
-
-
21
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
aaa-024913
103
Rth(j-a)
(K/W
duty cycle = 1
0.50
102
0.25
0.10
0.02
10
0.75
0.33
0.20
0.05
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-024914
103
Rth(j-a)
(K/W
duty cycle = 1
102
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0
0.01
1
10-3
0.02
10-2
10-1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
60
-
-
V
VF
forward voltage
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
210
250
mV
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
270
310
mV
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
350
400
mV
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
460
530
mV
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
510
580
mV
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
570
660
mV
IR
reverse current
Cd
[1]
diode capacitance
VR = 5 V; pulsed; Tj = 25 °C
[1]
-
0.8
-
µA
VR = 10 V; pulsed; Tj = 25 °C
[1]
-
1.1
-
µA
VR = 60 V; pulsed; Tj = 25 °C
[1]
-
11
50
µA
-
60
68
pF
VR = 1 V; f = 1 MHz; Tj = 25 °C
Very short test pulse to prevent junction self-heating.
006aaa758
104
006aaa759
105
IF
(mA)
4
IR 10
(µA) 3
10
103
(1)
(2)
(3)
(4)
(5)
102
(1)
(2)
102
10
(3)
1
10
10- 1
10- 2
1
(4)
10- 3
10- 1
0.0
0.2
0.4
0.6
VF (V)
10- 4
0.8
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = -40 °C
Fig. 3.
Product data sheet
20
40
VR (V)
60
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Forward current as a function of forward
voltage; typical values
PMEG6010CEGW
0
Fig. 4.
Reverse current as a function of reverse
voltage; typical values
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
006aaa760
120
Cd
(pF)
80
40
0
0
20
40
VR (V)
60
f = 1 MHz; Tamb = 25 °C
Fig. 5.
Diode capacitance as a function of reverse voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 6.
Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
12. Package outline
3.75
3.45
2.80
2.55
1.3
1.0
1
2
1.7
1.5
Dimensions in mm
Fig. 7.
16-10-13
Package outline SOD123
13. Soldering
SOD123
4.58
3.27
3.1
2.1 1.62
1.12 1.22 1.42
0.81
0.91
0.81
2.36
0.91
4.18
1.11
occupied area
solder resist
Cu pad
solder paste
Dimensions in mm
Fig. 8.
1.11
16-05-10
16-08-31
sod123_fr
Reflow soldering footprint for SOD123
PMEG6010CEGW
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
SOD123
7.5
2.65
2.5
2
4.5
3.5 2.55 2.4
1.2
occupied area
solder resist
solder land
glue dot
Dimensions in mm
Fig. 9.
0.33
1.2
16-09-02
16-09-06
sod123_fw
Wave soldering footprint for SOD123
PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6010CEGW v.1
20161124
Product data sheet
-
-
PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
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Data sheet status
Document
[1] [2]
status
Product
[3]
status
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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PMEG6010CEGW
Product data sheet
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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60 V, 1 A Low VF MEGA Schottky barrier rectifier
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information......................................................... 6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Nexperia B.V. 2017. All rights reserved
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Date of release: 24 November 2016
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